Reliable GaN-based THz Gunn diodes with side-contact and field-plate technologies
For the first time, Gallium Nitride (GaN)-based Gunn diodes with side-contact and fieldplate
technologies were fabricated and measured with reliable characteristics. A high negative …
technologies were fabricated and measured with reliable characteristics. A high negative …
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert… - Journal of Applied …, 2013 - pubs.aip.org
The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels
with broken symmetry (so called self switching diodes) have been fabricated for the first time …
with broken symmetry (so called self switching diodes) have been fabricated for the first time …
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels
C Daher, J Torres, I Iñiguez-De-La-Torre… - … on Electron Devices, 2015 - ieeexplore.ieee.org
An experimental demonstration of GaN-based asymmetric nanodiodes as direct and
heterodyne detectors up to 0.69 THz has been performed at room temperature …
heterodyne detectors up to 0.69 THz has been performed at room temperature …
Comparative Monte Carlo analysis of InP-and GaN-based gunn diodes
In this work, we report on Monte Carlo simulations to study the capability to generate Gunn
oscillations of diodes based on InP and GaN with around 1 μm active region length. We …
oscillations of diodes based on InP and GaN with around 1 μm active region length. We …
Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
The detection capability of GaN-based nano-diodes is measured up to 110 GHz in two
configuration schemes: voltage and current responsivity. The ratio between both figures of …
configuration schemes: voltage and current responsivity. The ratio between both figures of …
Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique
Due to a very high carrier concentration and low band gap, graphene based self-switching
diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage …
diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage …
GaN nanodiode arrays with improved design for zero-bias sub-THz detection
H Sánchez-Martín, S Sánchez-Martín… - Semiconductor …, 2018 - iopscience.iop.org
GaN based self-switching diodes (SSDs) have been fabricated for the first time on SiC
substrate. They have been characterized as RF power detectors in a wide frequency range …
substrate. They have been characterized as RF power detectors in a wide frequency range …
Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations
JF Millithaler, I Íñiguez-de-la-Torre… - Applied Physics …, 2014 - pubs.aip.org
In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric
shape, so-called self-switching diodes, are presented. A particular geometry for the …
shape, so-called self-switching diodes, are presented. A particular geometry for the …
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
A Westlund, P Sangaré, G Ducournau… - Solid-State …, 2015 - Elsevier
Abstract Design optimization of the InAs self-switching diode (SSD) intended for direct zero-
bias THz detection is presented. The SSD, which consists of nanometer-sized channels in …
bias THz detection is presented. The SSD, which consists of nanometer-sized channels in …
Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
E Pérez-Martín, I Íñiguez-De-La-Torre… - Journal of Applied …, 2021 - pubs.aip.org
In this paper, the occupancy of sidewall surface states having a clear signature in the
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …