A fully-integrated 77-GHz FMCW radar transceiver in 65-nm CMOS technology
A fully-integrated FMCW radar system for automotive applications operating at 77 GHz has
been proposed. Utilizing a fractional-synthesizer as the FMCW generator, the transmitter …
been proposed. Utilizing a fractional-synthesizer as the FMCW generator, the transmitter …
Millimeter-wave and terahertz transceivers in SiGe BiCMOS technologies
D Kissinger, G Kahmen… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …
A 77-GHz phased-array transceiver with on-chip antennas in silicon: Transmitter and local LO-path phase shifting
A Natarajan, A Komijani, X Guan… - IEEE Journal of Solid …, 2006 - ieeexplore.ieee.org
Integration of mm-wave multiple-antenna systems on silicon-based processes enables
complex, low-cost systems for high-frequency communication and sensing applications. In …
complex, low-cost systems for high-frequency communication and sensing applications. In …
Mm-wave fully integrated phased array receiver and transmitter with on-chip antennas
2006-12-18 Assigned to CALIFORNIA INSTITUTE OF TECHNOLOGY reassignment
CALIFORNIA INSTITUTE OF TECHNOLOGY ASSIGNMENT OF ASSIGNORS INTEREST …
CALIFORNIA INSTITUTE OF TECHNOLOGY ASSIGNMENT OF ASSIGNORS INTEREST …
A single-chip dual-band 22–29-GHz/77–81-GHz BiCMOS transceiver for automotive radars
Integration of multi-mode multi-band transceivers on a single chip will enable low-cost
millimeter-wave systems for next-generation automotive radar sensors. The first dual-band …
millimeter-wave systems for next-generation automotive radar sensors. The first dual-band …
Millimeter-wave CMOS power amplifiers with high output power and wideband performances
YH Hsiao, ZM Tsai, HC Liao, JC Kao… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
In this paper, we propose a design method of multi-way combining networks with impedance
transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output …
transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output …
A coupler-based differential mm-wave Doherty power amplifier with impedance inverting and scaling baluns
Designing Doherty power amplifiers (PAs) at high millimeter-wave (mm-Wave) range
remains a major challenge because most Doherty combiners at this frequency band are …
remains a major challenge because most Doherty combiners at this frequency band are …
W-band silicon-based frequency synthesizers using injection-locked and harmonic triplers
Two monolithically integrated W-band frequency synthesizers are presented. Implemented
in a 0.18 μm SiGe BiCMOS with f T/f max of 200/180 GHz, both circuits incorporate the same …
in a 0.18 μm SiGe BiCMOS with f T/f max of 200/180 GHz, both circuits incorporate the same …
A 77-GHz CMOS power amplifier with a parallel power combiner based on transmission-line transformer
This paper presents a 77-GHz CMOS power amplifier (PA) with a parallel power combiner
based on a transmission-line transformer (TLT). An inter-stage matched cascode power cell …
based on a transmission-line transformer (TLT). An inter-stage matched cascode power cell …
Design and analysis of a stage-scaled distributed power amplifier
J Chen, AM Niknejad - IEEE Transactions on Microwave Theory …, 2011 - ieeexplore.ieee.org
This paper presents the design, analysis, and measurement of a pseudodifferential
distributed power amplifier in a 0.13-μm SiGe BiCMOS process. To mitigate the large loaded …
distributed power amplifier in a 0.13-μm SiGe BiCMOS process. To mitigate the large loaded …