Pyramid-Patterned Germanium Composite Film Anode for Rechargeable Lithium-Ion Batteries Prepared Using a One-Step Physical Method
L Wang, M Wang, L Jiao, H Wang, J Yang, X Dong, T Bi… - Coatings, 2023 - mdpi.com
Using a top-down magnetron sputtering technique with a high deposition-rate, a one-step
method for preparing germanium (Ge) hybrid film is presented. At present, graphite film is …
method for preparing germanium (Ge) hybrid film is presented. At present, graphite film is …
GeSn based heterojunction double-gate tripple metal layer vertical TFET with enhanced DC and Analog/RF performance
In this article, low-bandgap material GeSn and high bandgap Si material heterojunction
(GeSn/Si) based double gate triple metal layer Vertical TFET is designed and analyzed by …
(GeSn/Si) based double gate triple metal layer Vertical TFET is designed and analyzed by …
Electrical Characterization of Multi-Gate MOSFET with Reduced Short-Channel Effects for High-Power Applications
N Yarlagadda, YK Verma, G Amarnath… - International …, 2024 - ui.adsabs.harvard.edu
The double-gate MOSFET is proposed for high-voltage and high-power applications with
decreased short-channel effects (SCEs) and drain current with gate overlap. This model …
decreased short-channel effects (SCEs) and drain current with gate overlap. This model …
Modeling and Simulation of Multi Gate MOSFET with Reduced Short Channel Effects for High Power Applications
Abstract The Multigate (Double-gate) MOSFET has been proposed for high voltage and high-
power applications with decreased short channel effects and drain current with gate overlap …
power applications with decreased short channel effects and drain current with gate overlap …