Oxygen-inserted (OI) Si channel nMOSFETs, which allow the formation and maintenance of
an undoped epitaxial layer underneath the gate dielectric, are known to provide higher ON …

Homiller, PLLC (57) ABSTRACT A semiconductor device includes a gate trench extending
into a Si substrate, a body region in the Si substrate adjacent the gate trench, a source …

Source engineering for gate length scaling of low-voltage power switch devices was
demonstrated by shrinking baseline 5V analog MOSFETs down to 0.25 um, leading to 100 …

Fin field-effect transistor (FinFET) scaling beyond the 10-nm node requires formation of a
junction isolation region between the source and the drain to suppress sub-fin leakage …

The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of
buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy …

(57) ABSTRACT A semiconductor device includes a gate trench extending into a Si
substrate, the gate trench including a gate electrode and a gate dielectric separating the …

2018-12-28 Assigned to INFINEON TECHNOLOGIES AUSTRIA AG reassignment
INFINEON TECHNOLOGIES AUSTRIA AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE …

(57) ABSTRACT A semiconductor device includes a doped Si base substrate, one or more
device epitaxial layers formed over a main surface of the doped Si base substrate, a …

Insertion of partial monolayers of oxygen atoms into Si lattice leads to modification of
formation enthalpy of various dopants and point defects, enabling remote control of doping …

Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation
enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant …