Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …

Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

β-Ga 2 O 3 epitaxial thin films were deposited using laser molecular beam epitaxy technique
and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy …

Magnetic random access memory schemes employing magnetoelectric coupling to write
binary information promise outstanding energy efficiency. We propose and demonstrate a …

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

Thin-film corundum-structured gallium oxide (α-Ga 2 O 3) Schottky barrier diodes (SBDs)
were fabricated by growing α-Ga 2 O 3 layers on sapphire substrates by the safe, low-cost …

ABSTRACT Gallium oxide (Ga2O3) has attracted tremendous attention in power electronics
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …

The recent progress and development of corundum-structured III-oxide semiconductors are
reviewed. They allow bandgap engineering from 3.7 to∼ 9 eV and function engineering …

Corundum-structured oxides have been attracting much attention as next-generation power
device materials. A corundum-structured α-Ga 2 O 3 successfully demonstrated power …

We report fundamental issues and prospects of the rhombohedral corundum-structured III-
oxide (III-O) alloy system constituted with α-M 2 O 3 (M= metal element) materials …