Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
Dislocations in 4H silicon carbide
Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …
Mechanisms of growth and defect properties of epitaxial SiC
In the last ten years, large improvements in the epitaxial silicon carbide processes have
been made. The introduction of chloride precursors, the epitaxial growth on large area …
been made. The introduction of chloride precursors, the epitaxial growth on large area …
Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions
RE Stahlbush, BL VanMil, RL Myers-Ward… - Applied Physics …, 2009 - pubs.aip.org
The paths of basal plane dislocations (BPDs) through 4 H-SiC epitaxial layers grown on
wafers with an 8 offcut were tracked using ultraviolet photoluminescence imaging. The …
wafers with an 8 offcut were tracked using ultraviolet photoluminescence imaging. The …
Glide and multiplication of basal plane dislocations during 4H‐SiC homoepitaxy
X Zhang, M Skowronski, KX Liu, RE Stahlbush… - Journal of Applied …, 2007 - pubs.aip.org
Basal plane dislocations (BPDs) are an important category of extended defects in SiC
epilayers. They act as nucleation sites for single layer Shockley-type stacking faults which …
epilayers. They act as nucleation sites for single layer Shockley-type stacking faults which …
SiC material properties
T Kimoto - Wide bandgap semiconductor power devices, 2019 - Elsevier
This chapter introduces the crystal structure, electronic band structure, and physical
properties of silicon carbide (SiC). Physical properties are critical parameters for accurate …
properties of silicon carbide (SiC). Physical properties are critical parameters for accurate …
Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes
JD Caldwell, RE Stahlbush, EA Imhoff… - Journal of Applied …, 2009 - pubs.aip.org
The increase in the forward voltage drop observed in 4 H-SiC bipolar devices due to
recombination-induced stacking fault (SF) creation and expansion has been widely …
recombination-induced stacking fault (SF) creation and expansion has been widely …
Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers
The formation mechanism and propagation behavior of a complex stacking fault (SF) in thick
silicon carbide epitaxial layers was investigated using depth-resolved section X-ray …
silicon carbide epitaxial layers was investigated using depth-resolved section X-ray …
Long range, non-destructive characterization of GaN substrates for power devices
It has been well established that GaN grown on native substrates yields higher quality films
compared to those grown on non-native substrates, such as SiC or Si. However …
compared to those grown on non-native substrates, such as SiC or Si. However …