Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Low-resistivity metal–semiconductor (M–S) contact is one of the urgent challenges in the
research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride …
research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride …
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
H Kawasaki, VS Basker, T Yamashita… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
FinFET integration challenges and solutions are discussed for the 22 nm node and beyond.
Fin dimension scaling is presented and the importance of the sidewall image transfer (SIT) …
Fin dimension scaling is presented and the importance of the sidewall image transfer (SIT) …
Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping
Regulating electrical properties is basic to accomplish a dynamic exhibition of electronic
devices such as field effect transistors (FETs). Chemical doping is advantageous in this …
devices such as field effect transistors (FETs). Chemical doping is advantageous in this …
Short-channel performance improvement by raised source/drain extensions with thin spacers in trigate silicon nanowire MOSFETs
M Saitoh, Y Nakabayashi, K Uchida… - IEEE electron device …, 2011 - ieeexplore.ieee.org
We investigate the short-channel performance of trigate silicon nanowire transistors. Drain-
induced barrier lowering at a gate length of 25 nm is strongly suppressed by reducing the …
induced barrier lowering at a gate length of 25 nm is strongly suppressed by reducing the …
Next generation bulk FinFET devices and their benefits for ESD robustness
A Griffoni, S Thijs, C Russ, D Trémouilles… - 2009 31st EOS/ESD …, 2009 - ieeexplore.ieee.org
This paper reports the first ESD results on NMOS and gated diode devices processed in a
bulk FinFET technology. A comparison with SOI FinFET performance is carried out …
bulk FinFET technology. A comparison with SOI FinFET performance is carried out …
Conformal doping mechanism for fin field effect transistors by self-regulatory plasma doping with AsH3 plasma diluted with He
Y Sasaki, K Okashita, B Mizuo, M Kubota… - Journal of Applied …, 2012 - pubs.aip.org
Key parameters for achieving n-type conformal doping desirable for source/drain extension
regions of Si n-channel fin field effect transistors (FinFETs) have been determined for self …
regions of Si n-channel fin field effect transistors (FinFETs) have been determined for self …
Bulk FinFET junction isolation by heavy species and thermal implants
FA Khaja, HJL Gossmann, B Colombeau… - … Conference on Ion …, 2014 - ieeexplore.ieee.org
One of the challenges for bulk-Si FinFET is forming the junction isolation at the 14nm node
and beyond. As the fins are scaled, source-drain punch-through can occur, which causes …
and beyond. As the fins are scaled, source-drain punch-through can occur, which causes …
Electrical contacts to two-dimensional transition-metal dichalcogenides
Abstract Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted
enormous interests as the novel channel materials for atomically thin transistors. Despite …
enormous interests as the novel channel materials for atomically thin transistors. Despite …
A novel method for source/drain ion implantation for 20 nm FinFETs and beyond
C Qin, H Yin, G Wang, Y Zhang, J Liu, Q Zhang… - Journal of Materials …, 2020 - Springer
This paper presents a method to improve source/drain extension (SDE) ion implantation (I/I)
process for sub-20 nm node FinFETs with no extra step in transistor process. Traditionally …
process for sub-20 nm node FinFETs with no extra step in transistor process. Traditionally …
Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices
Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in
hierarchical models to gain physical understanding for process optimization in advanced …
hierarchical models to gain physical understanding for process optimization in advanced …