Semiconductor nanowires: to grow or not to grow?
PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
[HTML][HTML] Optical characterisation of nanowire lasers
Semiconductor nanowire lasers are single-element structures that can act as both gain
material and cavity for optical lasing. They have typical dimensions on the order of an optical …
material and cavity for optical lasing. They have typical dimensions on the order of an optical …
Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
J Vukajlovic-Plestina, W Kim, L Ghisalberti… - Nature …, 2019 - nature.com
III-V semiconductor nanowires deterministically placed on top of silicon electronic platform
would open many avenues in silicon-based photonics, quantum technologies and energy …
would open many avenues in silicon-based photonics, quantum technologies and energy …
Si nanowires grown on Cu substrates via the hot-wire-assisted vapor–liquid–solid method for use as anodes for Li-ion batteries
Silicon is a high-capacity and safer next-generation anode material for Li-ion batteries, with
challenges from rapid capacity fade due to colossal volume changes during Li alloying/de …
challenges from rapid capacity fade due to colossal volume changes during Li alloying/de …
Natural occurrence of the diamond hexagonal structure in silicon nanowires grown by a plasma-assisted vapour–liquid–solid method
Silicon nanowires have been grown by a plasma-assisted vapour–liquid–solid method
using tin as the catalyst. Transmission electron microscopy in the [110] zone axis shows that …
using tin as the catalyst. Transmission electron microscopy in the [110] zone axis shows that …
Toward monolithic growth integration of nanowire electronics in 3D architecture: a review
L Liang, R Hu, L Yu - Science China Information Sciences, 2023 - Springer
Abstract Quasi-one-dimensional (1D) semiconducting nanowires (NWs), with excellent
electrostatic control capability, are widely regarded as advantageous channels for the …
electrostatic control capability, are widely regarded as advantageous channels for the …
Development of silicon nanowires with optimized characteristics and fabrication of radial junction solar cells with< 100 nm amorphous silicon absorber layer
We report the growth and characterization of Silicon nanowires (SiNWs) via the VLS
mechanism with two different tin (Sn) catalyst thicknesses of 2 and 4 nm at 400 and 500° C …
mechanism with two different tin (Sn) catalyst thicknesses of 2 and 4 nm at 400 and 500° C …
Binder-free Sn–Si heterostructure films for high capacity Li-ion batteries
This study fabricated and demonstrated a functional, stable electrode structure for a high
capacity Li-ion battery (LIB) anode. Effective performance is assessed in terms of reversible …
capacity Li-ion battery (LIB) anode. Effective performance is assessed in terms of reversible …
Heterogeneous and homogeneous nucleation in the synthesis of quasi-one-dimensional periodic core–shell nanostructures
V Gorshkov, V Tereshchuk, P Sareh - Crystal Growth & Design, 2021 - ACS Publications
We have analyzed the physical mechanisms responsible for the formation of an ordered
sequence of nanoclusters synthesized on a nanowire in the diffusion mode of deposition of …
sequence of nanoclusters synthesized on a nanowire in the diffusion mode of deposition of …
Epitaxial growth of peculiar GeSn and SiSn nanostructures using a Sn island array as a seed
V Timofeev, V Mashanov, A Nikiforov… - Applied Surface …, 2021 - Elsevier
The regularities of the GeSn and SiSn nanostructure formation on Si and Ge (1 0 0)
substrates on the vapor–liquid-crystal mechanism were studied. It was shown that either …
substrates on the vapor–liquid-crystal mechanism were studied. It was shown that either …