Technology and applications of micro-LEDs: their characteristics, fabrication, advancement, and challenges

TY Lee, LY Chen, YY Lo, SS Swayamprabha… - Acs …, 2022 - ACS Publications
Micro-light-emitting diodes (μLEDs) are getting much attention in display industry because of
their outstanding optical and electrical characteristics. μLEDs have several advantages over …

Deep‐ultraviolet micro‐LEDs exhibiting high output power and high modulation bandwidth simultaneously

D Li, S Liu, Z Qian, Q Liu, K Zhou, D Liu… - Advanced …, 2022 - Wiley Online Library
Abstract Deep‐ultraviolet (DUV) solar‐blind communication (SBC) shows distinct
advantages of non‐line‐of‐sight propagation and background noise negligibility over …

[HTML][HTML] Perovskites: weaving a network of knowledge beyond photovoltaics

CA Aranda, MM Byranvand, S Essig… - Journal of Materials …, 2022 - pubs.rsc.org
The outstanding properties of perovskites have brought them to the forefront of emerging
new materials in photovoltaics, rapidly approaching the performances of already well …

Electronic and optical properties of core–shell InAlN nanorods: a comparative study via LDA, LDA-1/2, mBJ, HSE06, G 0 W 0 and BSE methods

RR Pela, CL Hsiao, L Hultman, J Birch… - Physical Chemistry …, 2024 - pubs.rsc.org
Currently, self-induced InAlN core–shell nanorods enjoy an advanced stage of accumulation
of experimental data from their growth and characterization as well as a comprehensive …

Elastic, electronic, optical and thermoelectric properties of Ca5Si2N6 and Sr5Ge2N6 ternary nitrides

L Debache, Y Medkour, F Djeghloul, K Haddadi… - Journal of Physics and …, 2023 - Elsevier
In order to expand the scope of application of ternary nitrides and explore more thoroughly
their potential as novel materials, ab initio calculations founded on density functional theory …

Green-wavelength GaN-based photonic-crystal surface-emitting lasers

N Taguchi, A Iwai, M Noguchi, H Takahashi… - Applied Physics …, 2024 - iopscience.iop.org
Visible-wavelength GaN-based photonic-crystal surface-emitting lasers (PCSELs) have
attracted attention for various applications, such as materials processing, high-brightness …

A strategy to grow three dimensional InGaN/GaN heterostructure exclusively on non-polar m-plane of two-step etched GaN nanorods

MA Kulkarni, H Ryu, HJ Choi, A Abdullah… - Applied Surface …, 2024 - Elsevier
In this study, we present a strategy to prepare core–shell InGaN/GaN multiple quantum wells
(MQWs) heterostructure exclusively on the m plane sidewalls using dielectric masking of the …

[HTML][HTML] Nanomaterial integration in micro LED technology: Enhancing efficiency and applications

RK Mishra, K Verma, I Chianella, S Goel… - Next Nanotechnology, 2024 - Elsevier
The micro-light emitting diode (µLED) technology is poised to revolutionise display
applications through the introduction of nanomaterials and Group III-nitride nanostructures …

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼ 625 nm at 1 A cm− 2) with device sizes down to 3 …

S Sanyal, Q Lin, T Shih, S Zhang, G Wang… - Japanese Journal of …, 2024 - iopscience.iop.org
Abstract Ultra-small (10 μm) InGaN-based red microLEDs (625 nm at 1 A cm− 2) are
necessary for modern displays. However, an increase in surface-area-to-volume ratio with a …

Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN

T Grieb, FF Krause, K Müller-Caspary, JP Ahl… - Ultramicroscopy, 2022 - Elsevier
In this paper we perform angular resolved annular-dark field (ADF) scanning-transmission
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …