D Li, S Liu, Z Qian, Q Liu, K Zhou, D Liu… - Advanced …, 2022 - Wiley Online Library
Abstract Deep‐ultraviolet (DUV) solar‐blind communication (SBC) shows distinct advantages of non‐line‐of‐sight propagation and background noise negligibility over …
CA Aranda, MM Byranvand, S Essig… - Journal of Materials …, 2022 - pubs.rsc.org
The outstanding properties of perovskites have brought them to the forefront of emerging new materials in photovoltaics, rapidly approaching the performances of already well …
Currently, self-induced InAlN core–shell nanorods enjoy an advanced stage of accumulation of experimental data from their growth and characterization as well as a comprehensive …
In order to expand the scope of application of ternary nitrides and explore more thoroughly their potential as novel materials, ab initio calculations founded on density functional theory …
N Taguchi, A Iwai, M Noguchi, H Takahashi… - Applied Physics …, 2024 - iopscience.iop.org
Visible-wavelength GaN-based photonic-crystal surface-emitting lasers (PCSELs) have attracted attention for various applications, such as materials processing, high-brightness …
MA Kulkarni, H Ryu, HJ Choi, A Abdullah… - Applied Surface …, 2024 - Elsevier
In this study, we present a strategy to prepare core–shell InGaN/GaN multiple quantum wells (MQWs) heterostructure exclusively on the m plane sidewalls using dielectric masking of the …
The micro-light emitting diode (µLED) technology is poised to revolutionise display applications through the introduction of nanomaterials and Group III-nitride nanostructures …
Abstract Ultra-small (10 μm) InGaN-based red microLEDs (625 nm at 1 A cm− 2) are necessary for modern displays. However, an increase in surface-area-to-volume ratio with a …
In this paper we perform angular resolved annular-dark field (ADF) scanning-transmission electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …