State of the art recent progress in two dimensional MXenes based gas sensors and biosensors: A comprehensive review
Recently, MXenes have emerged as a novel and fast-growing family of two dimensional
(2D) materials. This broad group of 2D materials is of significant scientific and technological …
(2D) materials. This broad group of 2D materials is of significant scientific and technological …
Ferroelectric tunnel junctions: modulations on the potential barrier
Z Wen, D Wu - Advanced materials, 2020 - Wiley Online Library
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …
potential applications in next‐generation memories, owing to attractive advantages such as …
Metallic Ti3C2Tx MXene Gas Sensors with Ultrahigh Signal-to-Noise Ratio
Achieving high sensitivity in solid-state gas sensors can allow the precise detection of
chemical agents. In particular, detection of volatile organic compounds (VOCs) at the parts …
chemical agents. In particular, detection of volatile organic compounds (VOCs) at the parts …
High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
Ferroelectric tunnel junctions use a thin ferroelectric layer as a tunnelling barrier, the height
of which can be modified by switching its ferroelectric polarization. The junctions can offer …
of which can be modified by switching its ferroelectric polarization. The junctions can offer …
Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
Z Xi, J Ruan, C Li, C Zheng, Z Wen, J Dai, A Li… - Nature …, 2017 - nature.com
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential
applications in non-destructive readout non-volatile memories. Using a semiconductor …
applications in non-destructive readout non-volatile memories. Using a semiconductor …
The junctionless transistor
JP Colinge - Emerging devices for low-power and high …, 2018 - taylorfrancis.com
The junctionless transistor consists of a piece of uniformly doped semiconductor with a gate
placed between the source and drain contacts and is, therefore, the simplest transistor …
placed between the source and drain contacts and is, therefore, the simplest transistor …
Effects of channel length scaling on the signal-to-noise ratio in FET-type gas sensor with horizontal floating-gate
We investigate the channel length () scaling effects on the signal-to-noise ratio (SNR) of the
field-effect-transistor (FET)-type gas sensor with a horizontal floating-gate. A sensing layer …
field-effect-transistor (FET)-type gas sensor with a horizontal floating-gate. A sensing layer …
Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy
We investigate the variability of a ferroelectric FET (FEFET) in program operation using low-
frequency noise (LFN) spectroscopy. Contrary to the previous report, LFN characteristics of …
frequency noise (LFN) spectroscopy. Contrary to the previous report, LFN characteristics of …
Vertically stacked nanosheet FET: Charge-trapping memory and synapse with linear weight adjustability for neuromorphic computing applications
This work shows the feasibility of a vertically stacked nanosheet field effect transistor
(NSFET) for charge-trapping memory and artificial synaptic devices. The artificial synapse's …
(NSFET) for charge-trapping memory and artificial synaptic devices. The artificial synapse's …
Investigation of low-frequency noise characteristics in gated Schottky diodes
In this work, the low-frequency noise (LFN) characteristics of the 3-terminal-type gated
Schottky diode (GSD) were investigated. The GSD shows the 1/noise behavior, and the …
Schottky diode (GSD) were investigated. The GSD shows the 1/noise behavior, and the …