In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …

Thermoluminescence (TL) or thermally stimulated luminescence (TSL) spectroscopy is
based on liberating charge carriers from traps in the bandgap by providing enough thermal …

The photoluminescence, excitation, and absorption spectra as well as the electrical
conductivity of β-Ga 2 O 3: Cr and β-Ga 2 O 3: Cr, Mg single crystals were studied. The as …

Ion-beam-induced luminescence (IBIL) measurements were performed in Cr-doped β-
Ga2O3 using both protons and helium ions, showing a strong enhancement of the Cr3+ …

In situ ion-beam-induced luminescence measurements reveal a strong enhancement of the
Cr 3+ emission yield in electrically conductive chromium doped β-Ga 2 O 3 single crystals …

The effects of transition metal (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) doping on the
stability, electronic structure and optical properties of β-Ga 2 O 3 have been studied using …

An effect of alloying of the monoclinic β-Ga 2 O 3 with Al 2 O 3 and In 2 O 3 on the
photoluminescent, thermoluminescent and persistent luminescent properties of Cr 3+ ions …

β-Ga 2 O 3 is a wide bandgap semiconductor that is attractive for various applications,
including power electronics and transparent conductive electrodes. Its properties can be …

In this study, the effects of annealing on the surface residual impurities and intrinsic defects
of unintentionally doped (UID) β-Ga2O3 are investigated by adopting high-temperature …

The structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by
epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show …