This paper explores the performance characteristics of Germanium (Ge) and Gallium
Antimonide (GaSb) as potential channel materials for finFET devices. The analysis focuses …

The prime obstacle in continuing the transistor's scaling is to maintain ultra-shallow
source/drain (S/D) junctions with high doping concentration gradient, which definitely …

High-k dielectric insulators are required to reduce leakage and increase transistor
performance. They are able to impact the mobility of carriers in transistors positively, leading …

This paper presents a comparative study of the impact of Short Channel Effects (SCEs);
threshold voltage variation, subthreshold swing and drain-induced barrier lowering on both …

This work investigates the impact of electron mobility variations on short channel effects
(SCEs) in different semiconductor materials using FinFETs. Using PADRE simulator, the …

This work investigates the impact of temperature variation on Short Channel Effects (SCEs).
Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN) and Silicon (Si) …