[HTML][HTML] Crystallization kinetics of overlapping phases in Se70Te15Sb15 using isoconversional methods

MA Abdel-Rahim, MM Hafiz, AZ Mahmoud - Progress in Natural Science …, 2015 - Elsevier
The crystallization kinetics of Se 70 Te 15 Sb 15 chalcogenide glass was studied by
Differential Scanning Calorimetry (DSC) under non-isothermal conditions. This glass was …

Crystalline–amorphous and amorphous–amorphous transitions in phase-change materials

M Popescu, F Sava, A Velea, A Lőrinczi - Journal of non-crystalline solids, 2009 - Elsevier
The transition from the crystalline state to amorphous state and back has been studied in the
particular case of the GeSb2Te4 phase-change material by a computer simulation …

Local structure and influence of bonding on the phase-change behavior of the chalcogenide compounds K1− xRbxSb5S8

JB Wachter, K Chrissafis, V Petkov… - Journal of Solid State …, 2007 - Elsevier
KSb5S8 and its solid solution analogs with Rb and Tl were found to exhibit a reversible and
tunable glass→ crystal→ glass phase transition. Selected members of this series were …

[PDF][PDF] Infrared chalcogenide microlenses

D Savastru, S Miclos, R Savastru - Journal of Optoelectronics and …, 2006 - old.joam.inoe.ro
The advances in optoelectronic devices are based on the achievements in optics,
electronics and last but not least in material science. Among the most important materials …

[PDF][PDF] Structural modeling of ovonic materials

M Popescu - J. of Ovonic Research, 2006 - chalcogen.ro
The problem of phase-change mechanism at the atomic scale in ovonic materials is still
challenging. Various models have been developed, but no definite conclusions have been …

[PDF][PDF] DC conductivity in GeSb~ 2Te~ 4 and (GeSb~ 2Te~ 4)~ 9~ 0 (SnSe~ 2)~ 1~ 0 phase change materials

M Popescu, M Kubliha, J Kaluzny, A Velea… - … of Optoelectronics and …, 2007 - academia.edu
The dc electrical conductivity of the bulk amorphous GeSb2Te4 material has been
investigated. Pure and samples doped by 10 at.% SnSe2 have been measured. The …

Crystal/glass phase change in K1− xRbxSb5S8 (x= 0.25, 0.50, 0.75) studied through thermal analysis techniques

A Kaidatzis, JB Wachter, K Chrissafis… - Journal of non …, 2008 - Elsevier
K1− xRbxSb5S8 (x= 0.25, 0.5, 0.75) is a well-defined single-phase system that undergoes a
reversible phase-change. We determined the activation energy of glass transition and …

Chalcogenide systems at the border of the glass‐formation domain: A key for understanding the memory‐switching phenomena

M Popescu, A Velea, F Sava… - physica status solidi (b …, 2014 - Wiley Online Library
The compositions in the ternary chalcogenide systems from the demarcation region between
the glass‐formation domain (GFD) and the partially or fully crystalline formation domain …

[PDF][PDF] Metallorganische Gasphasenepitaxie (MOVPE) und Charakterisierung des Phasenwechselmaterials Ge-Sb-Te

SG Rieß - 2017 - scholar.archive.org
Die vorliegende Dissertation beschäftigt sich mit der epitaktischen Gasphasenabscheidung
von Ge-Sb-Te-basierten Phasenwechselmaterialien auf Si (111) Substraten und deren …

Simulation of the structure of GeAs4Te7 chalcogenide materials during memory switching

M Popescu, F Sava, A Velea, A Lőrinczi… - Canadian Journal of …, 2014 - cdnsciencepub.com
The complex chalcogenides with excellent memory switching properties are mainly situated
close to the border of glass formation domain. The simulation of the structural changes …