Tunneling magnetoresistance materials and devices for neuromorphic computing
Artificial intelligence has become indispensable in modern life, but its energy consumption
has become a significant concern due to its huge storage and computational demands …
has become a significant concern due to its huge storage and computational demands …
Developments and applications of tunneling magnetoresistance sensors
Magnetic sensors based on tunneling magnetoresistance (TMR) effect exhibit high
sensitivity, small size, and low power consumption. They have gained a lot of attention and …
sensitivity, small size, and low power consumption. They have gained a lot of attention and …
[HTML][HTML] Planar Hall Effect Magnetic Sensors with Extended Field Range
The magnetic field range in which a magnetic sensor operates is an important consideration
for many applications. Elliptical planar Hall effect (EPHE) sensors exhibit outstanding …
for many applications. Elliptical planar Hall effect (EPHE) sensors exhibit outstanding …
[HTML][HTML] Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property
S Akamatsu, M Oogane, M Tsunoda, Y Ando - AIP Advances, 2022 - pubs.aip.org
Magnetic tunnel junctions (MTJs) with (001)-oriented D0 3-FeAlSi epitaxial films, which have
both soft magnetic properties and surface flatness, were fabricated and characterized. A …
both soft magnetic properties and surface flatness, were fabricated and characterized. A …
[HTML][HTML] Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions
D Zhao, Y Wang, J Shao, Y Chen, Z Fu, Q Xia, S Wang… - AIP Advances, 2022 - pubs.aip.org
Magnetic tunnel junctions have been widely used in various applications, such as magnetic
sensors and magnetic random-access memories. In the practical application of MTJs, they …
sensors and magnetic random-access memories. In the practical application of MTJs, they …
A voltage-pulse-modulated giant magnetoresistance switch with four flexible sensing ranges
This article introduces an innovative technique for achieving a giant magnetoresistance
(GMR) switch with an adjustable sensing field range. A spin-valve (SV) patterned into a strip …
(GMR) switch with an adjustable sensing field range. A spin-valve (SV) patterned into a strip …
Low Hysteresis and High Stability in Tunneling Magnetoresistance Vortex Sensors with a Composite Free Layer
J Liu, M Guan, Y Gong, F Ni, X Gao… - IEEE Electron …, 2024 - ieeexplore.ieee.org
The linearity of tunneling magnetoresistance (TMR) sensors is challenging due to the
intrinsic magnetic hysteresis of the ferromagnetic Co-Fe-B layer used as the free layer. In …
intrinsic magnetic hysteresis of the ferromagnetic Co-Fe-B layer used as the free layer. In …
[HTML][HTML] Linearization of the tunneling magnetoresistance sensors through a three-step annealing process
Y Sun, Q Xia, D Zhang, Q Mou, Y Li, L Xie, S Guang… - AIP Advances, 2024 - pubs.aip.org
For tunneling magnetoresistance (TMR) sensors using magnetic tunnel junctions (MTJ), the
sensor output linearization is of great importance for practical applications. The current study …
sensor output linearization is of great importance for practical applications. The current study …