Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling
M Malakoutian, DE Field, NJ Hines… - … Applied Materials & …, 2021 - ACS Publications
The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …
power-efficient semiconductor devices, which are only possible with materials that can …
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices
The ever‐increasing power density is a major trend for electronics applications from dense
computing to 5G/6G networks. Joule heating and resulting high temperature in the device …
computing to 5G/6G networks. Joule heating and resulting high temperature in the device …
Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces
Abstract Advancing Silicon (Si) technology beyond Moore's law through 3D architectures
requires highly efficient heat management methods compatible with foundry processes …
requires highly efficient heat management methods compatible with foundry processes …
Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring
A sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic
Hg 2+ ions is developed for the first-time using molybdenum disulfide (MoS 2) functionalized …
Hg 2+ ions is developed for the first-time using molybdenum disulfide (MoS 2) functionalized …
Thermal management of GaN-on-Si high electron mobility transistor by copper filled micro-trench structure
SK Mohanty, YY Chen, PH Yeh, RH Horng - Scientific reports, 2019 - nature.com
Self-heating effect is a major limitation in achieving the full performance potential of high
power GaN power devices. In this work, we reported a micro-trench structure fabricated on …
power GaN power devices. In this work, we reported a micro-trench structure fabricated on …
AlGaN/GaN high electron mobility transistors on semi-insulating Ammono-GaN substrates with regrown ohmic contacts
W Wojtasiak, M Góralczyk, D Gryglewski, M Zając… - Micromachines, 2018 - mdpi.com
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN
have been investigated. By application of regrown ohmic contacts, the problem with …
have been investigated. By application of regrown ohmic contacts, the problem with …
Effects of gate length on GaN HEMT performance at room temperature
We report the electrical characteristics at room temperature of (Al, Ga) N/GaN high-electron-
mobility transistors with different gate lengths L g ranging from 0.15 to 2 μm. Static …
mobility transistors with different gate lengths L g ranging from 0.15 to 2 μm. Static …