The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

One of the modern methods for modifying semiconductors using beams of protons and
alpha particles is analyzed; this modification is accomplished by the controlled introduction …

Выполнен анализ одного из современных направлений модифицирования
полупроводников пучками протонов и α-частиц, осуществляемого путем …

The effect of/spl gamma/-ray exposure on the electrical characteristics of nickel/n-GaN
Schottky barrier diodes has been investigated using current-voltage (IV), capacitance …

Total-dose gamma radiation effects on static, high-frequency, and pulsed current–voltage
characteristics of silicon nitride passivated AlGaN/GaN HEMTs were investigated …

The remote sensing and satellite community working for space organizations have
expressed interest in building advanced devices with potential choices for Gallium Nitride …

Radiation damage mitigation in electronics remains a challenge because the only
established technique, thermal annealing, does not guarantee a favorable outcome. In this …

The effects of γ-ray irradiation on AlGaN/GaN epitaxial layers and on high electron mobility
transistor (HEMT) devices have been systematically investigated. The layer structure and …

The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …

Radiation damage in electronic devices is known to be influenced by physics, design, and
materials system. Here, we report the effects of biasing state (such as ON and OFF) and pre …