In this paper, we show that high-performance β-Ga 2 O 3 hetero-junction barrier Schottky
(HJBS) diodes with various β-Ga 2 O 3 periodic fin widths of 1.5/3/5 μm are demonstrated …

Flexible thin-film transistors (f-TFTs) not only attract research attention but also possess
significant application potential in various fields, such as consumer electronics, human …

High-performance p-type oxide thin film transistors (TFTs) have great potential for many
semiconductor applications. However, these devices typically suffer from low hole mobility …

Solution-processed In-Zn oxide (IZO) semiconductor thin-film transistors (TFTs) were
fabricated with passivation layers of either poly (methyl methacrylate)(PMMA) or cyclic …

Here, by depositing both the zinc tin oxide (ZTO) channel and Al2O3 gate dielectric layer
using atomic layer deposition (ALD) without breaking vacuum, we made TFTs with a steep …

In this paper, we presented 55‐in. 8K4K AMOLED TV employing coplanar oxide thin‐film
transistor (TFT) backplane, top emissive inkjet‐printing organic light‐emitting diode (OLED) …

In this study, we investigated the utilization of alumina (AlO x), formed through the oxidation
of thermally evaporated aluminum, as a passivation layer for nanometer-thin indium-tin …

In this paper, indium-gallium-zinc-oxide thin film transistors (TFTs) were successfully
fabricated by the pulsed laser deposition Ga-doped ZnO (GZO) films as source/drain (S/D) …

This paper investigates the bipolar resistive switching and synaptic characteristics of IZO
single-layer and IZO/SiO2 bilayer two-terminal memory devices. The chemical properties …

We designed and investigated an offset cancelling circuit based on a Wheatstone bridge at
the output of a Hall-effect sensor. This circuit not only cancelled the offset voltage caused by …