Dynamic acoustic control of individual optically active quantum dot-like emission centers in heterostructure nanowires
We probe and control the optical properties of emission centers forming in radial
heterostructure GaAs-Al0. 3Ga0. 7As nanowires and show that these emitters, located in …
heterostructure GaAs-Al0. 3Ga0. 7As nanowires and show that these emitters, located in …
[HTML][HTML] Temporal plasmonics: Fano and Rabi regimes in the time domain in metal nanostructures
Abstract The Fano and Rabi models represent remarkably common effects in optics. Here
we study the coherent time dynamics of plasmonic systems exhibiting Fano and Rabi …
we study the coherent time dynamics of plasmonic systems exhibiting Fano and Rabi …
Ultrafast spin tunneling and injection in coupled nanostructures of InGaAs quantum dots and quantum well
XJ Yang, T Kiba, T Yamamura, J Takayama… - Applied Physics …, 2014 - pubs.aip.org
We investigate the electron-spin injection dynamics via tunneling from an In 0.1 Ga 0.9 As
quantum well (QW) to In 0.5 Ga 0.5 As quantum dots (QDs) in coupled QW-QDs …
quantum well (QW) to In 0.5 Ga 0.5 As quantum dots (QDs) in coupled QW-QDs …
[PDF][PDF] 低维铟基阱-点复合量子结构及光学性能和应用前景
吴坚， 王玉红， 邰含旭， 郑明， 段若楠 - Chinese Journal of Lasers, 2022 - researching.cn
摘要现代光电信息产业的快速发展对半导体光电器件提出了越来越高的要求,
从而推动了半导体低维复合量子结构材料的研究和发展. 其中, 富铟团簇自组装复合量子结构 …
从而推动了半导体低维复合量子结构材料的研究和发展. 其中, 富铟团簇自组装复合量子结构 …
Influence of electronic coupling on the radiative lifetime in the (In, Ga) As/GaAs quantum dot–quantum well system
M Syperek, J Andrzejewski, W Rudno-Rudziński… - Physical Review B …, 2012 - APS
In this paper, we present time-resolved photoluminescence of self-assembled (In, Ga) As
quantum dots (QDs) coupled to an In x Ga 1− x As quantum well (QW) through a thin GaAs …
quantum dots (QDs) coupled to an In x Ga 1− x As quantum well (QW) through a thin GaAs …
Observation of coupling between zero-and two-dimensional semiconductor systems based on anomalous diamagnetic effects
We report the direct observation of coupling between a single self-assembled InAs quantum
dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states …
dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states …
Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
A systematic spectroscopic study of the carrier transfer between quantum dot (QD) and
quantum well (QW) layers is carried out in a hybrid dot-well system based on InAs QDs and …
quantum well (QW) layers is carried out in a hybrid dot-well system based on InAs QDs and …
Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures
Excitonic dynamics in a hybrid dot-well system composed of InAs quantum dots (QDs) and
an InGaAs quantum well (QW) is studied by means of femtosecond pump-probe reflection …
an InGaAs quantum well (QW) is studied by means of femtosecond pump-probe reflection …
Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures
SL Golovynskyi, OI Dacenko, SV Kondratenko… - Journal of Applied …, 2016 - pubs.aip.org
Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs)
heterostructures are studied. The response of the photocurrent to increasing excitation …
heterostructures are studied. The response of the photocurrent to increasing excitation …
Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness
J Liu, H Li, X Liu, Y Wang, Y Guo, S Wang, G Fu… - Applied Surface …, 2023 - Elsevier
This work exploits carrier injection hybrid structures in which carriers are injected into a layer
of In 0.4 Ga 0.6 As surface quantum dots (SQDs) from an adjacent In 0.15 Ga 0.85 As …
of In 0.4 Ga 0.6 As surface quantum dots (SQDs) from an adjacent In 0.15 Ga 0.85 As …