DNN‐aided read‐voltage threshold optimization for MLC flash memory with finite block length
The error‐correcting performance of multi‐level‐cell (MLC) NAND flash memory is closely
related to the block length of error‐correcting codes (ECCs) and log‐likelihood‐ratios of the …
related to the block length of error‐correcting codes (ECCs) and log‐likelihood‐ratios of the …