Fully solution-processed ZnO nanorod array/PEDOT: PSS heterojunction photodetector for ultraviolet light
This letter reports an inorganic/organic heterojunction photodetector using n-type zinc oxide
nanorod array (NRA) and p-type poly3, 4-ethylenedioxythiophene: polystyrene sulfonate …
nanorod array (NRA) and p-type poly3, 4-ethylenedioxythiophene: polystyrene sulfonate …
Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si
Metallization layers of aluminum, gold, or copper are shown to be protected from interactions
with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at …
with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at …
Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applications
Sub-stoichiometric molybdenum oxide (MoO x) has recently been investigated for
application in high efficiency Si solar cells as a “hole selective” contact. In this paper, we …
application in high efficiency Si solar cells as a “hole selective” contact. In this paper, we …
Broadband PureB Ge-on-Si photodiodes
LK Nanver, VV Hassan, A Attariabad… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Broadband PureB Ge-on-Si photodiodes were fabricated by in-situ capping of n-type Ge-
islands grown by chemical-vapor deposition on Si with a 10-nm-thick pure boron layer …
islands grown by chemical-vapor deposition on Si with a 10-nm-thick pure boron layer …
Interfaces between crystalline Si and amorphous B: interfacial interactions and charge barriers
The recently found crystalline silicon-amorphous boron (c-Si/aB) heterojunction has been
successfully applied in the detection of short-wave UV photons. These detectors play a …
successfully applied in the detection of short-wave UV photons. These detectors play a …
Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range
T Knežević, M Krakers… - Optical Components and …, 2020 - spiedigitallibrary.org
Optical characterization of PureGaB germanium-on-silicon (Ge-on-Si) photodiodes was
performed for wavelengths between 255 nm and 1550 nm. In PureGaB technology …
performed for wavelengths between 255 nm and 1550 nm. In PureGaB technology …
PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility
SD Thammaiah, X Liu, T Knežević, KM Batenburg… - Solid-state …, 2021 - Elsevier
Several methods of depositing pure boron (PureB) layers on silicon are examined with
respect to their potential for fabricating advanced PureB (photo) diodes with back-end-of-line …
respect to their potential for fabricating advanced PureB (photo) diodes with back-end-of-line …
[HTML][HTML] Nanolayer boron-semiconductor interfaces and their device applications
Nanolayers of pure boron (PureB) deposited on Si form p+-type regions at deposition
temperatures from 50° C to 700° C. At 700° C, commercial PureB photodiodes are produced …
temperatures from 50° C to 700° C. At 700° C, commercial PureB photodiodes are produced …
Low temperature pure boron layer deposition for silicon diode and micromachining applications
X Liu - 2021 - research.utwente.nl
This thesis was focused on further explorations to extend the applicability and availability of
PureB technology. In particular, B-layer depositions at temperatures below 500℃ were …
PureB technology. In particular, B-layer depositions at temperatures below 500℃ were …
Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents
Pure boron (PureB) deposition as the anode region of Si photodiodes creates negative fixed
charge at the boron/silicon interface, which is responsible for effective suppression of …
charge at the boron/silicon interface, which is responsible for effective suppression of …