Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Review of silicon carbide processing for power MOSFET
C Langpoklakpam, AC Liu, KH Chu, LH Hsu, WC Lee… - Crystals, 2022 - mdpi.com
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …
higher thermal conductivity, higher operating frequency, higher operating temperature, and …
Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–
semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact …
semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact …
Real-time FPGA simulation of high-voltage silicon carbide MOSFETs
GL Rødal, D Peftitsis - IEEE Transactions on Power Electronics, 2022 - ieeexplore.ieee.org
This article presents a real-time field-programmable gate array (FPGA)-based dynamic
model of high-voltage and high-current silicon carbide (SiC) metal-oxide-semiconductor …
model of high-voltage and high-current silicon carbide (SiC) metal-oxide-semiconductor …
Capacitance variations and gate voltage hysteresis effects on the Turn-ON switching transients modeling of high-voltage SiC MOSFETs
GL Rødal, YV Pushpalatha… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this article, we present a discrete and real-time capable dynamic behavioral model of the
turn-on switching transition of high-voltage and high-current silicon carbide (SiC) metal …
turn-on switching transition of high-voltage and high-current silicon carbide (SiC) metal …
C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation
X Zhu, T Bi, X Yuan, Y Chang, R Zhang, Y Fu, J Tu… - Applied Surface …, 2022 - Elsevier
In this paper, a diamond-silicon (C-Si) interface was constructed on a (1 1 1) diamond
substrate by annealing the SiO 2 gate insulator in a reductive atmosphere. Corresponding …
substrate by annealing the SiO 2 gate insulator in a reductive atmosphere. Corresponding …
Mobility enhancement in heavily doped 4H-SiC (0001),(112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process
The effects of a process that minimizes oxidation of SiC on the channel mobility of heavily
doped 4H-SiC (0001),(11 bar 2 0) and (1 bar 1 00) metal-oxide-semiconductor field-effect …
doped 4H-SiC (0001),(11 bar 2 0) and (1 bar 1 00) metal-oxide-semiconductor field-effect …
Atomic scale investigation of notch evolution on 4H-SiC under different cutting surfaces and environments
Y Zhou, Y Huang, J Li, W Lv, F Zhu - Journal of Manufacturing Processes, 2023 - Elsevier
Due to the hardness and brittleness of silicon carbide, the surface defects of 4H-SiC are
easily transferred to the machining stage. To better illustrate the influence of pre-existing …
easily transferred to the machining stage. To better illustrate the influence of pre-existing …
Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
In this paper, SiO 2 layers deposited on 4H-SiC and subjected to different post deposition
annealing (PDA) in NO and N 2 O were studied to identify the key factors influencing the …
annealing (PDA) in NO and N 2 O were studied to identify the key factors influencing the …
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide …
oriented aluminum nitride (AlN) thin films have been grown by plasma enhanced atomic
layer deposition (PE-ALD) on silicon carbide (4H-SiC) substrates. During different PE-ALD …
layer deposition (PE-ALD) on silicon carbide (4H-SiC) substrates. During different PE-ALD …