III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …

Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are
electrically driven at room temperature,. To fully utilize the benefits of large-scale, low-cost …

The structure of a number of GaN/AlGaN devices and their associated material growth and
processing issues are examined in some detail, and extrapolations are made to predict what …

This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

Current laser-based display and lighting applications are invariably using blue laser diodes
(LDs) grown on free-standing GaN substrates, which are costly and smaller in size …

Recently, many groups have focused on the development of GaN-based green LDs to meet
the demand for laser display. Great progresses have been achieved in the past few years …

In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a
hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The …

For the growth of low-defect crack-free GaN heterostructures on large-area silicon
substrates, compositional grading of AlGaN is a widely adapted buffer technique to restrict …

We report the metal-organic chemical vapor deposition growth of high-quality AlN on
sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the …

A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer
has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this …