We investigate the relationships between growth rate, time-temperature profile, residual
stress, dislocation density, and electrical performance of silicon ribbons grown via optical …

The SLIM-cut technique provides a way to obtain thin silicon foils without a standard sawing
step, thus avoiding kerf losses. This process consists of three steps: depositing a stress …

Хорошо известный способ получения слоев макропористого кремния с помощью
электрохимического и фотоэлектрохимического травления монокристаллических …

The purpose of this work is to verify the possibility to process highly doped Si supporting
substrates using a 2‐step process:(i) sintering of a low‐cost Si powder based ingot using hot …

The Silicon on Dust Substrate (SDS) is a gas-to-wafer process that produces multicrystalline
silicon ribbons directly from gaseous feedstock (silane), avoiding the standard industry steps …

Silicon wafers for photovoltaics could be produced without kerf loss by rolling, provided
sufficient control of defects such as dislocations can be achieved. A study using mainly high …

Исследован изохронный отжиг предварительно спрессованных образцов кремниевого
нанопорошка. Определена плотность, структура и электропроводность полученного …

The technique of the electrochemical and photoelectrochemical etching of single-crystal
silicon wafers commonly used to fabricate macroporous silicon layers is inefficient and …

Isochronous annealing of preliminarily compacted silicon nanopowder specimens is
investigated. The density, structure, and conductivity of the material are determined as a …

The Silicon on Dust Substrate (SDS) is a gas-to-wafer process that produces multicrystalline
silicon ribbons directly from gaseous feedstock (silane), avoiding the standard industry steps …