Conductive bridge random access memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications
Due to a rapid increase in the amount of data, there is a huge demand for the development
of new memory technologies as well as emerging computing systems for high-density …
of new memory technologies as well as emerging computing systems for high-density …
Recent progress in optoelectronic memristors for neuromorphic and in-memory computation
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …
appointed as the replacer of the outworn technology in conventional computing systems …
Tantalum pentoxide (Ta2O5 and Ta2O5-x)-based memristor for photonic in-memory computing application
Photonic in-memory computing exhibits promising potential to address the inherent
limitations of traditional von Neumann architecture. In this study, we demonstrate a tantalum …
limitations of traditional von Neumann architecture. In this study, we demonstrate a tantalum …
Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications
In this work, a reliable bilayer flexible memristor is demonstrated using TaOx/HfOx Bi‐layer
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
A Saleem, FM Simanjuntak, S Chandrasekaran… - Applied Physics …, 2021 - pubs.aip.org
An oxidizable metal diffusion barrier inserted between the active metal electrode and the
switching layer decreases the electroforming voltage and enhances the switching stability …
switching layer decreases the electroforming voltage and enhances the switching stability …
Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses
Investigating the promising chalcogenide materials for the development of memory and
advanced neuromorphic computing applications is a critical step in realizing electronic …
advanced neuromorphic computing applications is a critical step in realizing electronic …
Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …
landscape; thus, the demands of new memory types are growing that will be fast, energy …
Cu-Doped TiO2−x Nanoscale Memristive Applications in Chaotic Circuit and True Random Number Generator
F Yuan, S Li, Y Deng, Y Li… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
TiO 2 has attracted significant attention as a prototypical material for memristors. In this
article, a Cu-doped TiO 2− x nanoscale memristor with a structure of Ti/TiO 2-x: Cu/Cu is …
article, a Cu-doped TiO 2− x nanoscale memristor with a structure of Ti/TiO 2-x: Cu/Cu is …
Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode
In this work, a detailed improvement in the resistive switching behavior of Al-doped HfAlO-
based resistive random-access memory (RRAM) devices was studied by controlling the Al …
based resistive random-access memory (RRAM) devices was studied by controlling the Al …
Single‐atom quantum‐point contact switch using atomically thin hexagonal boron nitride
The first report of a quantized conductance atomic threshold switch (QCATS) using an
atomically‐thin hexagonal boron nitride (hBN) layer is provided. This QCATS has …
atomically‐thin hexagonal boron nitride (hBN) layer is provided. This QCATS has …