Review of dual-active-bridge converters with topological modifications

L Li, G Xu, D Sha, Y Liu, Y Sun… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The dual-active-bridge (DAB) converters inherit favorite features including zero-voltage
switching (ZVS) capability, wide voltage range, and natural bidirectional power flow. Facing …

Circulating current and ZVS-on of a dual active bridge DC-DC converter: A review

S Shao, H Chen, X Wu, J Zhang, K Sheng - Ieee Access, 2019 - ieeexplore.ieee.org
Dual active bridge (DAB) dc-dc converters have several attractive features including auto-
adjust bidirectional power flow, wide voltage gain range, and zero voltage switching (ZVS) …

Influence of junction-capacitance and dead-time on dual-active-bridge actual soft-switching-range: Analytic analysis and solution

Z Wang, C Li, J Liu, Z Zheng - IEEE Transactions on Power …, 2022 - ieeexplore.ieee.org
Dual active bridges (DABs) may lose zero voltage switching (ZVS) operation when the
junction capacitance of semiconductors cannot be fully charged or discharged within dead …

Fully ZVS, minimum RMS current operation of the dual-active half-bridge converter using closed-loop three-degree-of-freedom control

S Chakraborty, S Chattopadhyay - IEEE Transactions on Power …, 2018 - ieeexplore.ieee.org
This paper discusses how duty ratios of the primary and secondary half-bridge legs of a dual-
active half-bridge converter can be used in conjunction with phase-shift control to operate …

Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications

H Bencherif, L Dehimi, F Pezzimenti… - Journal of Electronic …, 2019 - Springer
The electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide–semiconductor
field-effect transistor (MOSFET) have been investigated by using a multiobjective genetic …

Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications

FG Della Corte, G De Martino… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Silicon carbide (SiC) power MOSFETs are available only for high-power and medium-to-
high-voltage applications, generally above 600 V, because for lower blocking voltages, they …

Towards full range zero-voltage switching of DAB converters: An improved multi-mode modulation at light loads under close-to-unity voltage ratio

Z Ye, C Li, J Liu, Z Zheng - IEEE Transactions on Power …, 2023 - ieeexplore.ieee.org
The soft switching characteristics of zero-voltage-switching (ZVS) are of great significance
for reducing the switching loss and improving the efficiency of the converter. However …

High power medium voltage converters enabled by high voltage SiC power devices

S Parashar, A Kumar… - 2018 International Power …, 2018 - ieeexplore.ieee.org
This paper presents the potential applications of HV SiC power devices for high power and
medium voltage power conversion systems. The advantages and features enabled by HV …

A novel transistor open-circuit fault localization scheme for three-phase dual active bridge

A Davoodi, D Sadeghpour, M Kashif… - 2018 Australasian …, 2018 - ieeexplore.ieee.org
Dual Active Bridge Isolated Bi-directional DC-DC Converter (DAB-IBDC) is suitable for a
variety of important applications. In this paper, a new method is proposed to identify and …

一种适用于智能配电网的DC/DC 换流器拓扑及其控制策略

曹莹, 顾翔 - 电网与清洁能源, 2021 - epjournal.csee.org.cn
由于智能配电网的高故障率特性以及城市土地资源的限制, DC/DC 换流器的体积, 成本, 效率,
控制性能和故障穿越能力逐渐成为其在该领域内的限制因素. 为此, 提出了一种基于电流源换流 …