Monitoring the stability of the fabricated high k Si MOS capacitors and investigation of...

Investigation of Leakage Parameters of Hafnium Silicate (HfSiO4) Based Nano-Scale MOS Circuits

J Ahmad - 2020 - search.proquest.com
Abstract High-k based Metal Oxide Semiconductor (MOS) capacitors are readily used in next
generation nano scaled Complementary Metal Oxide Semiconductor (CMOS) circuits. These …
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