[HTML][HTML] Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
AM Armstrong, BN Bryant, MH Crawford… - Journal of Applied …, 2015 - pubs.aip.org
The influence of a dilute In x Ga 1-x N (x∼ 0.03) underlayer (UL) grown below a single In
0.16 Ga 0.84 N quantum well (SQW), within a light-emitting diode (LED), on the radiative …
0.16 Ga 0.84 N quantum well (SQW), within a light-emitting diode (LED), on the radiative …
Structure and strain relaxation effects of defects in InxGa1− xN epilayers
The formation of trench defects is observed in 160 nm-thick In x Ga 1− x N epilayers with x≤
0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase …
0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase …
Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology …
C Frankerl, MP Hoffmann, F Nippert, H Wang… - Journal of Applied …, 2019 - pubs.aip.org
We report on a systematic study of the determination of the internal quantum efficiency (IQE)
in AlGaN-based multiple-quantum-well (MQW) structures using different optical evaluation …
in AlGaN-based multiple-quantum-well (MQW) structures using different optical evaluation …
High In content nitride sub-micrometer platelet arrays for long wavelength optical applications
We demonstrate high, up to 30% In content InGaN sub-micrometer platelets on GaN by
metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat …
metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat …
Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates
W Qi, J Zhang, C Mo, X Wang, X Wu, Z Quan… - Journal of Applied …, 2017 - pubs.aip.org
InGaN-based multiple quantum well (MQW) green light-emitting diodes with a InGaN/GaN
superlattice as a strain relief layer (SSRL) were grown on Si (111) substrates by metal …
superlattice as a strain relief layer (SSRL) were grown on Si (111) substrates by metal …
Recombination rate analysis of ingan-based red-emitting light-emitting diodes
The recombination rates are measured and analyzed for red-emitting InGaN light-emitting
diodes (LEDs) to better understand the factors that limit their efficiency. InGaN/AlGaN/GaN …
diodes (LEDs) to better understand the factors that limit their efficiency. InGaN/AlGaN/GaN …
Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires
Ultrafast optical microscopy is an important tool for examining fundamental phenomena in
semiconductor nanowires with high temporal and spatial resolution. Here, we used this …
semiconductor nanowires with high temporal and spatial resolution. Here, we used this …
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
In this paper, we report on the effects of including Si-doped (In) GaN prelayers on the low
temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We …
temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We …
Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates
We demonstrated nanoplatelet In x Ga 1− x N pseudosubstrates with In content varying from
0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in …
0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in …
On the internal quantum efficiency for InGaN/GaN light‐emitting diodes grown on insulating substrates
The internal quantum efficiency (IQE) for InGaN/GaN light‐emitting diodes (LEDs) grown on
[0001] sapphire substrates is strongly affected by various factors including polarization effect …
[0001] sapphire substrates is strongly affected by various factors including polarization effect …