Recent advances in 2D material theory, synthesis, properties, and applications

YC Lin, R Torsi, R Younas, CL Hinkle, AF Rigosi… - ACS …, 2023 - ACS Publications
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of
emergent 2D systems. Here, we review recent advances in the theory, synthesis …

Loading FeOOH on Ni (OH) 2 hollow nanorods to obtain a three-dimensional sandwich catalyst with strong electron interactions for an efficient oxygen evolution …

W Guo, D Li, D Zhong, S Chen, G Hao, G Liu, J Li… - Nanoscale, 2020 - pubs.rsc.org
Sustainable production of hydrogen by water splitting requires the exploration of highly
efficient electrocatalysts from abundant non-precious metals on Earth. Ni (OH) 2 hollow …

Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3

LA Walsh, CM Smyth, AT Barton, Q Wang… - The Journal of …, 2017 - ACS Publications
The interface between the topological insulator (TI) Bi2Se3 and deposited metal films is
investigated using X-ray photoelectron spectroscopy including conventional contact metals …

Spectroscopy of van der Waals nanomaterials: Opportunities and challenges

SV Mambakkam, S Law - Journal of Applied Physics, 2023 - pubs.aip.org
The study of van der Waals (vdW) materials has seen increased interest in recent years due
to the wide range of uses for these materials because of their unique mechanical, electronic …

[HTML][HTML] Topological materials by molecular beam epitaxy

M Brahlek, J Lapano, JS Lee - Journal of Applied Physics, 2020 - pubs.aip.org
Topology appears across condensed matter physics to describe a wide array of phenomena
which could alter, augment, or fundamentally change the functionality of many technologies …

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3

LA Walsh, AJ Green, R Addou, W Nolting… - ACS …, 2018 - ACS Publications
The topologically protected surface states of three-dimensional (3D) topological insulators
have the potential to be transformative for high-performance logic and memory devices by …

[HTML][HTML] Characterizing the structure of topological insulator thin films

A Richardella, A Kandala, JS Lee, N Samarth - APL Materials, 2015 - pubs.aip.org
We describe the characterization of structural defects that occur during molecular beam
epitaxy of topological insulator thin films on commonly used substrates. Twinned domains …

In situ spectroscopy of intrinsic topological insulator thin films and impact of extrinsic defects

P Ngabonziza, R Heimbuch, N De Jong, RA Klaassen… - Physical Review B, 2015 - APS
Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and
angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on …

Characteristic electronic structure of SnO film showing high hole mobility

M Minohara, I Hase, Y Aiura - The Journal of Physical Chemistry …, 2022 - ACS Publications
Actual knowledge of the intrinsic electronic characteristics of p-type oxide semiconductors
should help guide the design of innovative electronic devices. The electronic characteristics …

Solution to the Hole-Doping Problem and Tunable Quantum Hall Effect in Bi2Se3 Thin Films

J Moon, N Koirala, M Salehi, W Zhang, W Wu, S Oh - Nano letters, 2018 - ACS Publications
Bi2Se3, one of the most widely studied topological insulators (TIs), is naturally electron-
doped due to n-type native defects. However, many years of efforts to achieve p-type Bi2Se3 …