Semipolar GaN grown on foreign substrates: a review
F Scholz - Semiconductor Science and technology, 2012 - iopscience.iop.org
Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …
attention in recent years. Best results have been obtained on small bulk substrates cut from …
[HTML][HTML] InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes
GF Yang, Q Zhang, J Wang, YN Lu, P Chen, ZL Wu… - Reviews in Physics, 2016 - Elsevier
Abstract Phosphor-free InGaN/GaN multiple quantum well (MQW) white light-emitting diodes
(LEDs) have the advantages of simpler device process and potentially higher efficiency, and …
(LEDs) have the advantages of simpler device process and potentially higher efficiency, and …
Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si (001) substrate by phase transition
SC Lee, N Youngblood, YB Jiang, EJ Peterson… - Applied Physics …, 2015 - pubs.aip.org
The incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN
epitaxially grown over a Si (001) substrate by metal-organic vapor phase epitaxy is reported …
epitaxially grown over a Si (001) substrate by metal-organic vapor phase epitaxy is reported …
Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (\bf 11 {\overline 2} 2) GaN layers grown from the …
S Lazarev, S Bauer, T Meisch, M Bauer… - Journal of Applied …, 2013 - journals.iucr.org
Three-dimensional reciprocal space mapping of semipolar (11 {\overline 2} 2) GaN grown
on stripe-patterned r-plane (1 {\overline 1} 02) sapphire substrates is found to be a powerful …
on stripe-patterned r-plane (1 {\overline 1} 02) sapphire substrates is found to be a powerful …
Growth of III/Vs on silicon: nitrides, phosphides, arsenides and antimonides
The growth of III/V semiconductors on Silicon substrates has attracted great attention since
quite some time as several promising device concepts rely on the defect-free integration of …
quite some time as several promising device concepts rely on the defect-free integration of …
High-efficiency and crack-free InGaN-based LEDs on a 6-inch Si (111) substrate with a composite buffer layer structure and quaternary superlattices electron-blocking …
ZY Li, CY Lee, DW Lin, BC Lin, KC Shen… - IEEE Journal of …, 2014 - ieeexplore.ieee.org
In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and
grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN …
grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN …
Growth of () Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator
B Wannous, PM Coulon, L Dupré, F Rol… - … status solidi (b), 2023 - Wiley Online Library
The growth and characterization of (10 1¯ 1) semipolar GaN buffer, InGaN multiple quantum
wells (MQWs), and light‐emitting diode (LED) structure on patterned silicon‐on‐insulator …
wells (MQWs), and light‐emitting diode (LED) structure on patterned silicon‐on‐insulator …
Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates
K Ding, V Avrutin, N Izyumskaya… - … and Devices XIII, 2018 - spiedigitallibrary.org
Growth of nonpolar and semi-polar GaN and GaN-based structures offers the opportunity to
reduce quantum confined Stark effect and possibly increase indium incorporation, as …
reduce quantum confined Stark effect and possibly increase indium incorporation, as …
Improved Quantum Efficiency in Semipolar InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
We investigated the comparative structural and optical properties of semipolar InGaN/GaN
multiple quantum wells (MQWs) grown on the (1̄101) facet GaN/sapphire substrate by …
multiple quantum wells (MQWs) grown on the (1̄101) facet GaN/sapphire substrate by …
Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si (100) substrates
GaN-based light-emitting diodes (LEDs) structures with microstripes of InGaN/GaN quantum
wells were grown on the Si (111) planes of microscale V-grooved Si (100) substrate by …
wells were grown on the Si (111) planes of microscale V-grooved Si (100) substrate by …