High-performance reconfigurable FET for a simple variable gain buffer amplifier design
R Jayachandran, RS Komaragiri… - International Journal of …, 2022 - Taylor & Francis
Design and simulation of variable gain analog buffer amplifier using single gate
reconfigurable field-effect transistor (SG-RFET) with strained silicon channel are proposed …
reconfigurable field-effect transistor (SG-RFET) with strained silicon channel are proposed …
A novel nanosheet reconfigurable field effect transistor with dual-doped source/drain
B Lu, X Liu, Z Li, J Di, D Wang, Y Chen, L Dong… - Microelectronics …, 2024 - Elsevier
In this paper, a reconfigurable field-effect transistor (RFET) with dual-doped nanosheet
architecture and triple independent gates is proposed and studied with the numerical …
architecture and triple independent gates is proposed and studied with the numerical …
Challenges and Opportunities in Implementing Negative Differential Resistance Mode Reconfigurable Field Effect Transistors
L Sa, GFR Sa, J Sa, J Cb, AJ La - arXiv preprint arXiv:2312.08351, 2023 - arxiv.org
Desirably, the world relies on the devices being compact, as they could drive to the
increased functionality of integrated circuits at the provided footstep, that is becoming more …
increased functionality of integrated circuits at the provided footstep, that is becoming more …
Planar CMOS and multigate transistors based wide-band OTA buffer amplifiers for heavy resistance load
R Jayachandran, DK Jagalchandran… - Facta Universitatis …, 2022 - casopisi.junis.ni.ac.rs
Analog buffer amplifier configurations capable of driving heavy resistive load using different
operational transconductance amplifier (OTA) are presented in this paper. The OTA CMOS …
operational transconductance amplifier (OTA) are presented in this paper. The OTA CMOS …
TCAD Design of a 3-Terminal Inverter Using Non-Align Double Gates and Its Performance Assessment
This work presents the design and simulation analysis of a compact nano-scale single-
device inverter structure of 220 nm length and an oscillator by using non-aligned double …
device inverter structure of 220 nm length and an oscillator by using non-aligned double …
3D Design of Gate All‐Around Field Effect Transistor Using Visual TCAD
B Srujana, D Jayanthi, R Krishna… - Smart Grids as Cyber …, 2024 - Wiley Online Library
In this paper, the design of the 3D view of gate all‐around field effect transistors of 40 nm
gate radius and extract their characteristics. The effect of modifications in channel length and …
gate radius and extract their characteristics. The effect of modifications in channel length and …
Simulation of Reconfigurable FET circuits using Sentaurus TCAD tool
R Jayachandran, RS Komaragiri… - Sub-Micron …, 2022 - taylorfrancis.com
This chapter introduces the basic tool flow of the Sentaurus technology computer-aided
design (TCAD) tool and explores the device characteristic simulations and circuit-level …
design (TCAD) tool and explores the device characteristic simulations and circuit-level …
[PDF][PDF] Unity Gain and Variable Gain OTA Buffer Amplifier with Resistive Load Using Multi-Gate Transistors
R Jayachandran, RS Komaragiri - 2021 - academia.edu
Analog buffer amplifier using reconfigurable FET and gate-all around FET devices are
demonstrated to analyze the feasibility of using multi-gate device in analog circuits. In this …
demonstrated to analyze the feasibility of using multi-gate device in analog circuits. In this …