CMOS image sensor with per-column ΣΔ ADC and programmable compressed sensing

Y Oike, A El Gamal - IEEE Journal of Solid-State Circuits, 2012 - ieeexplore.ieee.org
A CMOS image sensor architecture with built-in single-shot compressed sensing is
described. The image sensor employs a conventional 4-T pixel and per-column ΣΔ ADCs …

Back-Illuminated 10- CAPD Pixels for High-Speed Modulation Time-of-Flight CMOS Image Sensor

Y Kato, T Sano, Y Moriyama, S Maeda… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
A back-illuminated (BI) time-of-flight CMOS image sensor with 10-current-assisted photonic
demodulator (CAPD) pixels has been developed. The BI pixel structure maximizes fill factor …

4.6 A 1/2.3 inch 20Mpixel 3-layer stacked CMOS Image Sensor with DRAM

T Haruta, T Nakajima, J Hashizume… - … Solid-State Circuits …, 2017 - ieeexplore.ieee.org
In recent years, the performance of cellphone cameras has improved, and is becoming
comparable to that of SLR cameras. However, the big difference between cellphone …

[图书][B] Essential principles of image sensors

T Kuroda - 2017 - books.google.com
Providing a succinct introduction to the systemization, noise sources, and signal processes
of image sensor technology, Essential Principles of Image Sensors discusses image …

Pixel/DRAM/logic 3-layer stacked CMOS image sensor technology

H Tsugawa, H Takahashi, R Nakamura… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
We developed a CMOS image sensor (CIS) chip, which is stacked pixel/DRAM/logic. In this
CIS chip, three Si substrates are bonded together, and each substrate is electrically …

A 1.8e Temporal Noise Over 110-dB-Dynamic Range 3.4 Pixel Pitch Global-Shutter CMOS Image Sensor With Dual-Gain Amplifiers SS-ADC, Light Guide …

M Kobayashi, Y Onuki, K Kawabata… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
A 1.8 e rms-temporal noise over 110 dB dynamic range 3.4 μm pixel pitch global shutter
(GS) CMOS image sensor (C'S) single-slope analog digital converters (ADCs) with dual …

A 6.9- m Pixel-Pitch Back-Illuminated Global Shutter CMOS Image Sensor With Pixel-Parallel 14-Bit Subthreshold ADC

M Sakakibara, K Ogawa, S Sakai… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
In this paper, we report on a back-illuminated, global shutter, CMOS image sensor (CIS) with
a pixel-parallel, single-slope analog-to-digital converter (ADC). We adopted a digital bucket …

8.3 M-pixel 480-fps global-shutter CMOS image sensor with gain-adaptive column ADCs and chip-on-chip stacked integration

Y Oike, K Akiyama, LD Hung… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
This paper presents a 4K2K 480-fps global-shutter CMOS image sensor with a super 35-mm
format for a highly realistic digital video system. The sensor employs newly developed gain …

Image sensors

HS Choi, JB Yun, J Ahn - US Patent 10,199,421, 2019 - Google Patents
US10199421B2 - Image sensors - Google Patents US10199421B2 - Image sensors - Google
Patents Image sensors Download PDF Info Publication number US10199421B2 US10199421B2 …

Lock-in pixel based time-of-flight range imagers: an overview

K Yasutomi, S Kawahito - IEICE Transactions on Electronics, 2022 - search.ieice.org
Time-of-flight (TOF) range imaging is a promising technology for various applications such
as touchless control, augmented reality interface, and automotive. The TOF range imagers …