Spintronics-based artificial neural networks (ANNs) exhibiting nonvolatile, fast, and energy-
efficient computing capabilities are promising neuromorphic hardware for performing …

This paper introduces SIMPLY+, an advanced Spin-Transfer Torque Magnetic Random-
Access Memory (STT-MRAM)-based Logic-in-Memory (LIM) architecture that evolves from …

Switching in magnetic tunnel junctions (MTJs) is considered to be coherent according to the
macrospin model but above a critical characteristic length (R c) this process becomes …

This paper explores the impact on reliability and energy-efficiency in double-barrier
magnetic tunnel junctions (DMTJs)-based smart material implication (SIMPLY) scheme …

Content addressable memories have raised great interest involving the realm of Big Data
and Artificial Intelligence, along with the emerging non-volatile (eNV) technology magnetic …

Spin-transfer torque magnetic random-access memory (STT-MRAM) has been
demonstrated to be a leading candidate for on-chip memory technology. In this work, double …

The efficiency of massively parallel search operations, along with the non-volatile (NV)
capability of magnetic tunnel junction (MTJ), has raised significant interest for NV content …

Nowadays, the era of” More than Moore” has arisen as a significant influence in light of the
limitations anticipated by Moore's law. The computing systems are exploring alternative …