Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer …
In this research article, a recessed field-plated gate AlGaN/GaN-based nano-high electron
mobility transistor (HEMT) grown on a β-Ga2O3 substrate is designed with and without …
mobility transistor (HEMT) grown on a β-Ga2O3 substrate is designed with and without …
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications
In this research study, a recessed gate III-Nitride high electron mobility transistor (HEMT)
grown on a lattice matched β-Ga 2 O 3 substrate is designed. This research investigation …
grown on a lattice matched β-Ga 2 O 3 substrate is designed. This research investigation …