Nonvolatile multistates memories for high-density data storage

Q Cao, W Lü, XR Wang, X Guan, L Wang… - … Applied Materials & …, 2020 - ACS Publications
In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

Business process simulation

K Tumay - Proceedings of the 28th conference on Winter …, 1996 - dl.acm.org
This introductory tutorial provides an overview of business process simulation and how it
works. Descriptions of modeling elements and model performance measures are presented …

[HTML][HTML] Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

M Alamdar, T Leonard, C Cui, BP Rimal, L Xue… - Applied Physics …, 2021 - pubs.aip.org
There are pressing problems with traditional computing, especially for accomplishing data-
intensive and real-time tasks, that motivate the development of in-memory computing …

In-memory computing with spintronic devices

D Fan, S Angizi, Z He - 2017 IEEE Computer Society Annual …, 2017 - ieeexplore.ieee.org
In-Memory computing has drawn many attentions as a promising solution to reduce massive
power hungry data traffic between computing and memory units, leading to significant …

Beyond cmos

S Das, A Chen, M Marinella - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
Dimensional and functional scaling 1 1 Functional Scaling: Suppose that a system has been
realized to execute a specific function in a given, currently available, technology. We say that …

Accelerating low bit-width deep convolution neural network in MRAM

Z He, S Angizi, D Fan - 2018 IEEE Computer Society Annual …, 2018 - ieeexplore.ieee.org
Deep Convolution Neural Network (CNN) has achieved outstanding performance in image
recognition over large scale dataset. However, pursuit of higher inference accuracy leads to …

Evaluating spintronic devices using the modular approach

S Ganguly, KY Camsari, S Datta - IEEE Journal on Exploratory …, 2016 - ieeexplore.ieee.org
Over the past decade, a large family of spintronic devices has been proposed as candidates
for replacing CMOS for future digital logic circuits. Using the recently developed modular …

Thickness and interface-dependent crystallization of CoFeB alloy thin films

JP Pellegren, VM Sokalski - IEEE Transactions on Magnetics, 2015 - ieeexplore.ieee.org
We have analyzed the crystallization processes of sputtered thin films of Co 20 Fe 60 B 20
and Co 20 Fe 60 B 20-X alloys (X= Ta, Hf) using the increase in saturation magnetization …

Domain wall coupling-based STT-MRAM for on-chip cache applications

Y Seo, X Fong, K Roy - IEEE Transactions on Electron Devices, 2014 - ieeexplore.ieee.org
This paper proposes a domain-wall-coupling-based magnetic device for high-speed and
robust on-chip cache applications. The read and write current paths are magnetically …

IMCS2: Novel device-to-architecture co-design for low-power in-memory computing platform using coterminous spin switch

F Parveen, S Angizi, Z He, D Fan - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Spin switch (SS) is a promising spintronic device which exhibits compactness, low power,
non-volatility, input-output isolation leveraging giant spin Hall effect, spin transfer torque …