Sensor applications based on AlGaN/GaN heterostructures
KT Upadhyay, MK Chattopadhyay - Materials Science and Engineering: B, 2021 - Elsevier
Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …
albeit new, is well-established material system in the fields of high power, high temperature …
Optimal sensor placement for permanent magnet synchronous motor condition monitoring using a digital twin-assisted fault diagnosis approach
Efficient health monitoring for identifying and quantifying damages can substantially improve
the performance and structural integrity of engineered systems. Specifically, new advances …
the performance and structural integrity of engineered systems. Specifically, new advances …
Enhancement-mode GaN transistor technology for harsh environment operation
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
[HTML][HTML] Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures
T Ciuk, R Kozłowski, A Romanowska, A Zagojski… - Carbon Trends, 2023 - Elsevier
High-temperature electrical properties of p-type hydrogen-intercalated quasi-free-standing
epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated …
epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated …
Hall-effect sensor design with physics-informed Gaussian process modeling
Magnetic field sensor devices have been widely used to track changes in magnetic flux
concentration, and the Hall sensors are promising in many engineering applications. Design …
concentration, and the Hall sensors are promising in many engineering applications. Design …
Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor
We report the effect of stress or strain on the electronic characteristics of a normally off
AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly …
AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly …
[HTML][HTML] Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate
AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other …
AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other …
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
H Okeil, T Erlbacher, G Wachutka - Advanced Materials …, 2025 - Wiley Online Library
Abstract 4H‐SiC is a key enabler for realizing integrated electronics operating in harsh
environments, which exhibit very high temperatures. Through advances in 4H‐SiC process …
environments, which exhibit very high temperatures. Through advances in 4H‐SiC process …
High-temperature thermal stability of a graphene Hall effect sensor on defect-engineered 4H-SiC (0001)
T Ciuk, C Nouvellon, F Monteverde… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this letter, we demonstrate a Hall effect sensor in the technology of amorphous-Al 2 O 3-
passivated transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial …
passivated transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial …
Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment
Further development of harsh environment electronics capable of uncooled operation under
Venus surface atmospheric conditions (~ 460° C,~ 92 bar, corrosive) would enable future …
Venus surface atmospheric conditions (~ 460° C,~ 92 bar, corrosive) would enable future …