State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Earth‐rich transition metal phosphide for energy conversion and storage
Low‐cost and resourceful transition metal phosphides (TMPs) have gradually received wide
acceptance in the energy industry through exhibiting comparable catalytic activity and long …
acceptance in the energy industry through exhibiting comparable catalytic activity and long …
A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal - AEU-International Journal of Electronics and …, 2020 - Elsevier
The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal - Superlattices and Microstructures, 2017 - Elsevier
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …
suitable for RF and high power applications. It plays a vital role in Wireless communication …
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
This work covers the impact of dual metal gate engineered Junctionless MOSFET with
various high-k dielectric in Nanoscale circuits for low power applications. Due to gate …
various high-k dielectric in Nanoscale circuits for low power applications. Due to gate …
Multi-functional gallium arsenide nanoparticles and nanostructures fabricated using picosecond laser ablation
GaAs based nanomaterials have attracted significant attention owing to their applications in
electronic, photonic, and sensing devices. In the present communication, we report on the …
electronic, photonic, and sensing devices. In the present communication, we report on the …
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
This paper reviews the rapid advancements being made in the development of high electron
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
The outstanding electron transport properties of InGaAs and InAs semiconductor materials,
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …
III-V compound semiconductors: Growth and structures
TF Kuech - Progress in crystal growth and characterization of …, 2016 - Elsevier
The semiconductors formed from group 13 metals and from group 15 anions, referred to as
the III-V semiconductors, have found use in a broad range of technologies. Their versatility …
the III-V semiconductors, have found use in a broad range of technologies. Their versatility …
A novel route to fibers with volatile crystalline semiconductor cores Part 2: Selenides and phosphides
The flux assisted molten core method, previously employed to fabricate glass-clad
crystalline GaAs core fiber, is applied here to realize crystalline selenide and phosphide …
crystalline GaAs core fiber, is applied here to realize crystalline selenide and phosphide …