Doping is the key feature in semiconductor device fabrication. Many strategies have been
discovered for controlling doping in the area of semiconductor physics during the past few …

Computational study plays an important role to discover the potential of the bio-inspired
nano scale molecular devices. Density Functional Theory (DFT) is one of the popular …

Silicon (Si) nano-electronics is advancing towards the end of the Moore's Law, as gate
lengths of just a few nanometers have been already reported in state-of-the-art transistors. In …

The electrostatic potential of p+-n+ junctions, as in Esaki (tunnel) diodes, originates from the
Coulomb potentials of ionized dopants in the depletion-layer, but it has been modeled so far …

This paper discusses the role of trap-assisted-tunneling process in controlling the ON-and
OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel …

Miniaturization is the key feature in the area of semiconductor technologies. The number of
highly sophisticated, tiny electronic gazettes is increasing day by day. Therefore, it is …

Direct manufacturing of two-dimensional material-based double barrier (DB) tunnel
junctions, based on a lithography-free approach was developed. Graphene/h …

Tunnel (Esaki) diodes prepared in silicon (Si) nanowires could provide a unique platform to
investigate band-to-band tunneling (BTBT) transport in nanoscale. However, the successful …

New types of resonant tunneling currents at Si-p/n junctions, which are caused by the
resonance between the donor and acceptor-dopant states and by the resonance states in a …

The inherent properties of graphene oxide (GO) and reduced graphene oxide (rGO) render
these materials applicable in energy storage devices. The band gap energy of these …