(57) ABSTRACT A method of forming a LDMOS semiconductor device and Structure for
Same. A preferred embodiment comprises form ing a first guard ring around and proximate …

The present invention provides a semiconductor structure, comprising (a) a semiconductor
Substrate which includes a top substrate surface which defines a reference direction per …

Electrostatic discharge (ESD) continues to impact semiconductor components and systems
as technologies scale from micro-to nano-electronics. This book studies electrical …

An integrated semiconductor device includes a first transis tor and a second transistor
formed on a semiconductor substrate, and an isolation structure located adjacent to the …

Design structures, structures and methods of manufacturing structures for providing latch-up
immunity for mixed voltage integrated circuits. The structure includes a diffused N-Tub …

(57) ABSTRACT A Semiconductor device includes a Semiconductor Substrate, an insulating
layer, an inductor, a guard ring and a potential applying line. The insulating layer is formed …

In mixed-component, mixed-signal, semiconductor devices, selective seal ring isolation from
the Substrate and its electrical potential is provided in order to segregate noise sensitive …

(57) ABSTRACT A semiconductor structure. The semiconductor structure includes a
semiconductor Substrate, a first transistor on the semiconductor Substrate, and a guard ring …

HO1L 29/7816 USPC........... 257/E21427, E23. 002, E29, 063, 126, 257/335, 336,618, 758;
327/109 See application file for complete search history. guard rings are formed in P-wells …

BACKGROUND Modern electronic devices, and particularly, integrated circuits, are at risk of
damage due to electrostatic discharge (ESD) events. During an ESD event, a voltage (or …