GaN nanowires, also called nanocolumns, have emerged over the last decade as promising
nanosized building blocks for a wide variety of optoelectronic devices. In contrast to other III …

We report the selective-area growth (SAG) of Ga-polar thin GaN nanowires on patterned
GaN/sapphire (0001) substrates using metalorganic chemical vapor deposition (MOCVD) …

The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted
molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous …

On Si (1 1 1) and Si (0 0 1), GaN nanowires (NWs) form in a self-induced way without the
need for any external material. On sapphire, NW growth is induced by Ni collectors. Both …

This paper reports on the growth, structural and optical properties of GaN free-stranding
nanowires synthesized in catalyst-free mode on Si (111) substrate by plasma-assisted …

We investigate the low-temperature photoluminescence of GaN nanowires grown catalyst
free on Si (111). For single nanowires dispersed on Si (111), we observe excitonic …

The optical properties of GaN nanowires grown by catalyst free plasma-assisted molecular
beam epitaxy on Si (111) are investigated by photoluminescence (PL) spectroscopy. The …

We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires
are grown by molecular beam epitaxy on a Si (111) substrate in a self-organized manner …

GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy
on SiOx/Si (111) substrates patterned with microsphere lithography. For the first time, the …

Controlled bottom-up selective-area epitaxy (SAE) is used to tailor the morphology and
photoluminescence properties of GaN/InGaN core–shell nanowire arrays. The nanowires …