Slurry components in metal chemical mechanical planarization (CMP) process: A review
D Lee, H Lee, H Jeong - International Journal of Precision Engineering …, 2016 - Springer
Chemical mechanical planarization (CMP) is a wet polishing technique employed to smooth
the surface of various materials using a combination of chemical and mechanical forces to …
the surface of various materials using a combination of chemical and mechanical forces to …
Materials quest for advanced interconnect metallization in integrated circuits
Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …
improvements while increasing the cost and complexity of the technology with each …
Citric acid as a complexing agent in chemical mechanical polishing slurries for cobalt films for interconnect applications
A colloidal silica-based slurry (3–10 wt%) containing H 2 O 2 (1 wt%) and citric acid (50 mM)
was found to polish chemical vapor-deposited (CVD) cobalt (Co) films with removal rates …
was found to polish chemical vapor-deposited (CVD) cobalt (Co) films with removal rates …
Potassium tartrate as a complexing agent for chemical mechanical polishing of Cu/Co/TaN barrier liner stack in H2O2 based alkaline slurries
L Hu, G Pan, C Li, X Zhang, J Liu, P He… - Materials Science in …, 2020 - Elsevier
The chemical mechanical polishing (CMP) of Cu/Co/TaN barrier liner stack of the sub-14nm
devices was associated with several challenges, one of which was to screen out the desired …
devices was associated with several challenges, one of which was to screen out the desired …
Potassium oleate as a dissolution and corrosion inhibitor during chemical mechanical planarization of chemical vapor deposited Co films for interconnect applications
R Popuri, H Amanapu, CK Ranaweera… - ECS Journal of Solid …, 2017 - iopscience.iop.org
4 Triazole (TAZ), N-lauroylsarcosine sodium salt (NLS) and potassium oleate (PO) were
tested as passivating additives to previously developed H 2 O 2 and citric acid-based silica …
tested as passivating additives to previously developed H 2 O 2 and citric acid-based silica …
Effect of ethylenediamine on CMP performance of ruthenium in H 2 O 2-based slurries
Y Xu, T Ma, Y Liu, B Tan, S Zhang, Y Wang, G Song - RSC advances, 2022 - pubs.rsc.org
With the aggressive scaling of integrated circuits, ruthenium has been proposed as the next
generation barrier material to replace the conventional bilayer of tantalum and tantalum …
generation barrier material to replace the conventional bilayer of tantalum and tantalum …
Investigation on inhibition of ruthenium corrosion by glycine in alkaline sodium hypochlorite based solution
S Shao, B Wu, P Wang, P He, XP Qu - Applied Surface Science, 2020 - Elsevier
Removal of Ru by etching in alkaline sodium hypochlorite (NaClO) based solution is carried
out. The glycine on the corrosion of Ru in NaClO based solution is systematically …
out. The glycine on the corrosion of Ru in NaClO based solution is systematically …
Post-CMP cleaning solutions for the removal of organic contaminants with reduced galvanic corrosion at copper/cobalt interface for advanced Cu interconnect …
It has been difficult to remove BTA-related organic residues (BTA, Cu-BTA, and Co-BTA
complexes) and silica abrasives from various surfaces during post Cu-CMP cleaning when …
complexes) and silica abrasives from various surfaces during post Cu-CMP cleaning when …
The effect of hydroxyethylidene diphosphonic acid on the chemical mechanical polishing of cobalt in H2O2 based alkaline slurries
L Hu, G Pan, Y Xu, H Wang, Y Zhang… - ECS Journal of Solid …, 2020 - iopscience.iop.org
Cobalt (Co) has caused much interest as an attractive liner material for Cu for the sub-14nm
devices. In this paper, the synergetic effect of H 2 O 2 and hydroxyethylidene diphosphonic …
devices. In this paper, the synergetic effect of H 2 O 2 and hydroxyethylidene diphosphonic …
Electron Scattering at Ru–TiN–Ru Interface Stacks
Electron transport across Ru-TiN–Ru interfaces is quantified using multilayers containing
five 10-nm-thick Ru (0001) layers separated by TiN interlayers with nominal thicknesses …
five 10-nm-thick Ru (0001) layers separated by TiN interlayers with nominal thicknesses …