W Jaegermann, H Tributsch - Progress in Surface Science, 1988 - Elsevier
This review is aimed at the correlation of structural and electronic properies of semiconducting transition metal chalcogenides with molecular surface processes and …
The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is …
Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic …
Ion bombardment sputtering is widely used in combination with various analytical approaches to determine the elemental composition of thin solid layers as a function of …
The reactivity of thiophene (C4H4S) and ethanethiol (CH3CH2SH) has been studied with TDS on the MoS2 (0001) surface. No catalytic activity was detected for thiophene adsorption …
CA Papageorgopoulos - Surface Science, 1978 - Elsevier
Adsorption of Cs on basal planes of MoS2 has been studied with LEED, Auger and work function measurements. LEED observations show that in the 200–300 K range Cs is …
The paper reviews the experimental results concerning the ion-beam modification of adsorption and catalytic properties of solid surfaces, with ion implantation as well as ion …
W Jaegermann - Photoelectrochemistry and photovoltaics of layered …, 1992 - Springer
The surface and interface properties of layered materials of the type MX 2 and MX are discussed with respect to energy converting interfaces. The specific electronic and structural …
LR Balsenc - Electrons and Transitions, 2005 - Springer
Sulfur occurs widely in nature, as the element, as H2S and S02, in innumerable sulfide ores and in various forms in fossil fuels. The widespread natural occurence of sulfur and sulfur …