Photoluminescence and multiphonon resonant Raman scattering in low-temperature grown ZnO nanostructures
The authors report on the optical properties of nanocrystalline ZnO grown at 200 C by radio-
frequency magnetron sputtering. The nanocrystalline nature of the films was confirmed by …
frequency magnetron sputtering. The nanocrystalline nature of the films was confirmed by …
[HTML][HTML] 氧化锌基材料, 异质结构及光电器件
申德振， 梅增霞， 梁会力， 杜小龙， 叶建东， 顾书林… - 发光学报, 2020 - cjl.lightpublishing.cn
Ⅱ-Ⅵ 族直接带隙化合物半导体氧化锌(ZnO) 的禁带宽度为3.37 eV, 室温下激子束缚能高达60
meV, 远高于室温热离化能(26 meV), 是制造高效率短波长探测, 发光和激光器件的理想材料 …
meV, 远高于室温热离化能(26 meV), 是制造高效率短波长探测, 发光和激光器件的理想材料 …
Influence of Al-doping on the structure and optical properties of ZnO films
Al-doped ZnO (ZnO: Al) thin films with c-axis preferred orientation were deposited on glass
substrates using the radio frequency reactive magnetron sputtering technique. The effect of …
substrates using the radio frequency reactive magnetron sputtering technique. The effect of …
Microstructure and optical properties of ZnO: Al films prepared by radio frequency reactive magnetron sputtering
Pure and Al-doped ZnO (ZnO: Al) films have been deposited using radio frequency (RF)
reactive magnetron sputtering at the O2: Ar ratio of 10: 10, 6: 10, and 2: 10sccm and 150° C …
reactive magnetron sputtering at the O2: Ar ratio of 10: 10, 6: 10, and 2: 10sccm and 150° C …
Properties of Al heavy-doped ZnO thin films by RF magnetron sputtering
LJ Li, H Deng, LP Dai, JJ Chen, QL Yuan, Y Li - Materials research bulletin, 2008 - Elsevier
Al-doped ZnO films were deposited by RF magnetron sputtering. From the X-ray diffraction
and scanning electron spectrometer studies, wurtzite structure with (002) orientation ZnO …
and scanning electron spectrometer studies, wurtzite structure with (002) orientation ZnO …
Structural degradation and optical property of nanocrystalline ZnO films grown on Si (100)
Structural degradation of nanocrystalline ZnO films was observed with an increase in films
thickness. Nanocrystalline epitaxial thin film with thickness of∼ 170 nm changed to …
thickness. Nanocrystalline epitaxial thin film with thickness of∼ 170 nm changed to …
Low-temperature interface engineering for high-quality ZnO epitaxy on Si (111) substrate
XN Wang, Y Wang, ZX Mei, J Dong, ZQ Zeng… - Applied Physics …, 2007 - pubs.aip.org
Zn O (0001)∕ Si (111) interface is engineered by using a three-step technique, involving
low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double …
low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double …
Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)
WR Liu, YH Li, WF Hsieh, CH Hsu… - Crystal Growth and …, 2009 - ACS Publications
High-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111)
substrates using a nanothick high-k oxide Y2O3 buffer layer. Determined by X-ray diffraction …
substrates using a nanothick high-k oxide Y2O3 buffer layer. Determined by X-ray diffraction …
Luminescence properties of ZnO layers grown on Si-on-insulator substrates
The authors report on the photoluminescence properties of polycrystalline ZnO thin films
grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron …
grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron …
Epitaxial ZnO layer growth on Si (111) substrates with an intermediate aln nucleation layer by methane-based chemical vapor deposition
R Müller, O Gelme, JP Scholz, F Huber… - Crystal Growth & …, 2020 - ACS Publications
The growth of high-quality single-crystalline zinc oxide (ZnO) layers on silicon (Si (111))
substrates with an intermediate aluminum nitride (AlN) nucleation layer was investigated …
substrates with an intermediate aluminum nitride (AlN) nucleation layer was investigated …