In this paper, we have designed and theoretically analyzed InGaAs/GaAsSb nanoscale
heterostructure, where InGaAs is quantum well material and GaAsSb is the barrier material …

This paper presents the structural and optical characteristics of nanoscale semiconductor
lasers for telecommunication and biomedical applications. Improved fabrication techniques …

Optical transition strength are observed to be affected in Al 0.8 Ga 0.2 As/GaAs 0.8 P 0.2
type-I QW-heterostructure under external electric field. This paper reports optical gain …

The application of external pressure on a heterostructure produces changes in the lattice
parameter and symmetry of the material. These in turn produce significant changes in the …

The paper deals with the effects of well width deviation on optical gain and Optical
properties of Gallium Antimony based type-I AlSb/InGaAsSb/AlSb nano-scale …

Wavefunctions and optical gain in a single In 0.24 Ga 0.76 N quantum well sandwiched
between the GaN barriers has been reported. Optical gain within x-polarization and z …

Variations in wavefunction confinement under external uniaxial strain are observed to affect
the optical gain obtained in type-II quantum well nanodimension heterostructures. This …

The electronic and optical properties of GaAs-based Type-I n-Al 0.45 Ga 0.55 As/GaAs 0.84
P 0.16/p-Al 0.45 Ga 0.55 As quantum well heterostructure have been investigated. The …

The application of external pressure on a heterostructure produces changes in the lattice
parameter and symmetry of the material. These in turn produce significant changes in the …

The electronic and optical properties of GaAs-based Type-I n-Al0. 45Ga0. 55As/GaAs0.
84P0. 16/p-Al0. 45Ga0. 55As quantum well heterostructure have been investigated. The …