Luminescence properties of defects in GaN
MA Reshchikov, H Morkoç - Journal of applied physics, 2005 - pubs.aip.org
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …
have gained an unprecedented attention due to their wide-ranging applications …
Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee - Materials Science and Engineering: R: Reports, 2015 - Elsevier
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
Carbon is a common impurity in the group-III nitrides, often unintentionally incorporated
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …
Carbon impurities and the yellow luminescence in GaN
Using hybrid functional calculations we investigate the effects of carbon on the electrical and
optical properties of GaN. In contrast to the currently accepted view that C substituting for N …
optical properties of GaN. In contrast to the currently accepted view that C substituting for N …
[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
M Meneghini, I Rossetto, D Bisi… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper presents an extensive investigation of the properties of the trap with activation
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
In this study we investigated the incorporation of the dopants Si, Mg, and Fe and the
unintentional impurities O and C in GaN films grown on m-plane (101¯ 0), a-plane (112¯ 0) …
unintentional impurities O and C in GaN films grown on m-plane (101¯ 0), a-plane (112¯ 0) …
Doping of III-nitride materials
P Pampili, PJ Parbrook - Materials Science in Semiconductor Processing, 2017 - Elsevier
In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
The impact of C incorporation on the deep level spectrum of n-type and semi-insulating
GaN: C: Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was …
GaN: C: Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was …
Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination
X Guo, Y Zhong, X Chen, Y Zhou, S Su, S Yan… - Applied Physics …, 2021 - pubs.aip.org
This Letter studies the reverse leakage and breakdown mechanisms of vertical GaN-on-Si
Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The …
Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The …