The FinFET architecture has attracted growing attention over the last two decades since its
invention, owing to the good control of the gate electrode over the conductive channel …

In this paper, a 3D process of a nanometric n-channel fin field-effect transistor (FinFET) is
discussed and the impact of variations of the fin parameter, the gate work function, and …

This paper investigates the electrical characteristics of the nanoscale n-channel double gate
fin field-effect transistor (FinFET) structures and their sensitivity to gate dielectric materials …

This paper analyses the electrical characteristics of 10 nm tri-gate (TG) N-and P-channel
silicon-on-insulator (SOI) FinFETs with hafnium oxide gate dielectric. The analysis has been …

The miniaturization has become a key word for advanced integrated circuits over the last few
years. It is within this context that the fin field effect transistor (FinFET) has appeared as a …

The conventional silicon channel metal oxide semiconductor field effect transistor (MOSFET)
has fundamental limits that are reached due to scalability, resulting in short-channel effects …

This paper explores the modeling and simulation of DG SOI (Semiconductor On Insulator) N
FinFET 10 nm with Hafnium Oxide by using SILVACO TCAD Atlas Software. The major …

This paper explores the performance characteristics of Germanium (Ge) and Gallium
Antimonide (GaSb) as potential channel materials for finFET devices. The analysis focuses …

In recent years, demands for high speed and low power circuits have been raised. As
conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to …

In this paper, the design steps of an n-MOSFET have been described and then the electrical
characterization of this MOSFET is simulated at 100 nm by using the SILVACO ATLAS …