In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …

We report the demonstration of a normal-incidence pin germanium-tin (Ge_0. 951Sn_0.
049) photodetector on silicon-on-insulator substrate for 2 μm wavelength application. The …

We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge
multiple-quantum-well (MQW) pin photodiode, exhibiting a 3-dB bandwidth (f3-dB) above 10 …

We introduced photon-trapping microstructures into GeSn-based photodetectors for the first
time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W …

Enhancing photon detection efficiency and time resolution in photodetectors in the entire
visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging …

Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …

With the rapid development of 5 G communications, artificial intelligence, the Internet of
Things and other fields, the increasing demand for data transmission in communication …

Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of
both the conventional photodetector and unique electronic properties of zero-dimensional …

Silicon photodetectors (PDs) operating at near‐IR wavelengths with high speed and high
sensitivity are becoming critical for emerging applications, such as light detection and …

A short-range, compact, real-time pulsed laser rangefinder is constructed based on pulsed
time-of-flight (ToF) method. In order to reduce timing discrimination error and achieve high …