To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

Due to the magnificent properties of Silicon Carbide (SiC), such as high saturation drift
velocity, large operating temperature, higher cut-off and maximum frequency (fT and fmax) …

This paper proposes a charge-to-breakdown (Q BD) approach for SiC/SiO 2 dielectric
lifetime extraction. The current through the dielectric is shown to be a combination of Fowler …

In this work, a useful interfacial damage extraction method for SiC power MOSFETs based
on the CV characteristics is proposed. According to the five different interface situations of …

In this work the impact of bipolar degradation on the temperature estimation during power
cycling of high voltage SiC MOSFETs by means of the body-diode voltage drop is …

To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …

A new process technology for 4H-SiC planar power MOSFETs based on a boron diffusion
step to improve the SiO 2/silicon carbide interface quality is presented in this paper. Large …

The structural design, static, dynamic power losses and short-circuit robustness of vertical
Ga 2 O 3 planar gate MOSFETs for medium voltage (3300 V-6500 V) ratings are first …

The degradation of electrical parameters for SiC power metal-oxide-semiconductor field-
effect transistors (MOSFETs) under repetitive switching stress is investigated in detail. The …

In this paper, a new ultra-low specific on-resistance quasi SiC MOSFET is proposed.
Compared with the conventional SiC MOSFET, the proposed quasi SiC MOSFET has no …