Comprehensive variability analysis in dual-port fefet for reliable multi-level-cell storage
HfO 2-based FeFET is a remarkably promising candidate among emerging memory
technologies. Its manifold applications range from nonvolatile memory to neuromorphic …
technologies. Its manifold applications range from nonvolatile memory to neuromorphic …
Influence of annealing temperature on the structural and electrical properties of Si-doped ferroelectric hafnium oxide
The ferroelectric properties of hafnium oxide films are strongly influenced by the
crystallization process due to the interaction of thermodynamics, kinetics, and mechanical …
crystallization process due to the interaction of thermodynamics, kinetics, and mechanical …
Ferroelectricity in CMOS-compatible hafnium oxides: Reviving the ferroelectric field-effect transistor technology
A Ferroelectric Field-Effect Transistor (FEFET) is a promising candidate for next-generation
memory devices because it offers numerous advantages, such as its high speed, low energy …
memory devices because it offers numerous advantages, such as its high speed, low energy …
FeFET Reliability Modeling for In-Memory Computing: Challenges, Perspective, and Emerging Trends
Ferroelectric FET (FeFET) is a singularly attractive emerging technology with a rich feature
set. Boasting high versatility, it has already been implemented in a host of applications, like …
set. Boasting high versatility, it has already been implemented in a host of applications, like …
Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications
Hafnia-based ferroelectric thin-film transistors (FeTFTs) are regarded as promising
candidates for future nonvolatile memory devices owing to their low power consumption …
candidates for future nonvolatile memory devices owing to their low power consumption …
Cross-layer reliability modeling of dual-port fefet: Device-algorithm interaction
The Ferroelectric Field-Effect Transistor (FeFET) is an emerging Non-Volatile Memory (NVM)
technology enabling novel data-centric architectures that go far beyond von Neumann …
technology enabling novel data-centric architectures that go far beyond von Neumann …
Polarization Pruning: Reliability Enhancement of Hafnia‐Based Ferroelectric Devices for Memory and Neuromorphic Computing
Ferroelectric (FE) materials are key to advancing electronic devices owing to their non‐
volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based …
volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based …
Variability study of ferroelectric field-effect transistors towards 7nm technology node
The random variation sources have a significant influence on the performance of
ferroelectric field-effect transistor (FeFET). In this work, comparative analysis on the process …
ferroelectric field-effect transistor (FeFET). In this work, comparative analysis on the process …
Cross-layer fefet reliability modeling for robust hyperdimensional computing
Hyperdimensional computing (HDC) is an emerging learning paradigm that has gained a lot
of attention due to its ability to train with fewer data, lightweight implementation, and …
of attention due to its ability to train with fewer data, lightweight implementation, and …
Design Considerations for sub-1V 1T1C FeRAM memory circuits
We present a comprehensive benchmarking framework for one transistor-one capacitor
(1T1C) low-voltage ferroelectric random access memory (FeRAM) circuits. We focus on the …
(1T1C) low-voltage ferroelectric random access memory (FeRAM) circuits. We focus on the …