Unipolar-light emitting diode like structures were grown by NH 3 molecular beam epitaxy on
c plane (0001) GaN on sapphire templates. Studies were performed to experimentally …

Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …

Atom probe tomography (APT) is a novel analytical microscopy method that provides three
dimensional elemental mapping with sub‐nanometer spatial resolution and has only …

Atom probe tomography (APT) is used to characterize the influence of hydrogen dosing
during GaN barrier growth on the indium distribution of In x Ga 1− x N quantum wells, and …

Quantum wells and barriers with precise thicknesses and abrupt composition changes at
their interfaces are critical for obtaining the desired emission wavelength from quantum …

In x Ga 1–x N/GaN single and multi quantum well (MQW) structures with x≈ 0.13 were
investigated optically by photoreflectance, photoluminescence excitation spectroscopy, and …

Although surface plasmon (SP) coupling has been widely used for enhancing the emission
efficiency of an InGaN/GaN quantum well (QW) structure, the interplay of the carrier transport …

Atom Probe Tomography (APT) has emerged as a stand-alone technique for material
characterization at the sub-nanometer level, with unrivaled spatial resolution, coupled with …

Calculated frequency distributions of atom probe tomography reconstructions ($80 nm field
of view) of very thin AlxGa1ÀxN (0.18 x 0.51) films grown via metalorganic vapor phase …

We investigate the influence of p-(Al) GaN growth temperature (T g) on the optoelectronic
performances of InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes …