A Non-Isolated and Cost-Effective Hybrid Driving Solution for High Voltage GaN HEMTs
Wide Bandgap (WBG) power devices, and especially Gallium Nitride (GaN) High-Electron-
Mobility Transistors (HEMTs), have recently demonstrated excellent performance in high …
Mobility Transistors (HEMTs), have recently demonstrated excellent performance in high …
[PDF][PDF] One Product Family Fits All: Gate Driver Solutions for Si, SiC, and GaN
CM Matrisciano, SPD Engineer, D Varajao - 2023 - bodospower.com
A proprietary double coil on-chip transformer also ensures high magnetic field immunity
(MFI), fulfilling the most stringent test levels according to IEC 61000-4-8, IEC 61000-4-9, ISO …
(MFI), fulfilling the most stringent test levels according to IEC 61000-4-8, IEC 61000-4-9, ISO …